DMS2095LFDB Overview
and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Power management functions DMS2095LFDB P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SCHOTTKY DIODE.
DMS2095LFDB Key Features
- MOSFET with Low RDS(ON)
- minimize conduction losses
- Low Gate Threshold Voltage, -1.3V Max
- Schottky Diode with Low Forward Voltage Drop
- Low Profile, 0.5mm Max Height
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- Qualified to AEC-Q101 Standards for High Reliability
- Case: U-DFN2020-6 Type B
- Case Material: Molded Plastic, “Green” Molding pound. UL