DMT10H010LPS mosfet equivalent, n-channel mosfet.
BVDSS 100V
RDS(ON) Max 8.3mΩ @ VGS = 10V
ID TC = +25°C
98A
Description
This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet main.
* High Conversion Efficiency
* Low RDS(ON)
– Minimizes On-State Losses
* Low Input Capacitan.
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