DMT3011LDT Datasheet | Diodes Incorporated

A D VNAEN CWEPDRIONDFUOCRTM A T I O N DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Device Q1 Q2 V(BR)DSS 30V 30V RDS(ON) Max 20mΩ @ VGS = 10V 32mΩ @ VGS = 4.5V 11.1mΩ @ VGS = 10V 13.8mΩ @ VGS = 4.5V ID Max TA = +25°C 8A 6.3A 10.7A 9.6A Features - 0.6mm Profile - Ideal for Low Profile Applications - PCB Footprint of 4mm2 - Low Gate Threshold Voltage - Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications - Mobile puting - Point of Load Mechanical Data - Case: V-DFN3030-8 (Type K) - Case Material: Molded Plastic, “Green” Molding pound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminals:...