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DMT6008LFG - N-Channel MOSFET

General Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Synchronous Rectifier Backlighting Power Management Functions

Key Features

  • Low RDS(ON).
  • Ensures on State Losses Are Minimized.
  • Excellent Qgd x RDS (ON) Product (FOM).
  • Advanced Technology for DC/DC Converts.
  • Small Form Factor Thermally Efficient Package Enables Higher Density End Products.
  • Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product.
  • 100% UIS (Avalanche) rated.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen.

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Full PDF Text Transcription for DMT6008LFG (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMT6008LFG. For precise diagrams, and layout, please refer to the original PDF.

ADVNAENWCEP IRNNOEFDWOURPCRTMOADTIUOCNT DMT6008LFG N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 60V RDS(ON) max 7.5mΩ @ VGS = 10V 11.5mΩ @ VGS = 4.5V ID max...

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V(BR)DSS 60V RDS(ON) max 7.5mΩ @ VGS = 10V 11.5mΩ @ VGS = 4.5V ID max TC = +25°C 60A 49A Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

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