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DMT6009LSS Datasheet N-Channel MOSFET

Manufacturer: Diodes Incorporated

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General Description

and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

 Power Management Functions  DC-DC Converters  Backlighting SO-8 S Mechanical Data  Case: SO-8  Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Finish - Matte Tin Annealed over Copper Leadframe;

Overview

ADVANCE INNEFWORPRMOADTIUOCNT DMT6009LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) max 9.5mΩ @ VGS = 10V 12mΩ @ VGS = 4.5V ID max TA = +25°C 10.8A 9.

Key Features

  • 100% Unclamped Inductive Switch (UIS) Test in Production.
  • High Conversion Efficiency.
  • Low RDS(ON).
  • Ensures On State Losses Are Minimized.
  • Excellent Qgd x RDS(ON) Product (FOM).
  • Advanced Technology for DC-DC Converters.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).

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