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DMT6010LSS Datasheet N-Channel MOSFET

Manufacturer: Diodes Incorporated

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General Description

and Applications This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance.

This device is ideal for use in notebook battery power management and loadswitch.

 Backlighting  Power Management Functions  DC-DC Converters Mechanical Data  Case: SO-8  Case Material: Molded Plastic, "Green" Molding Compound.

Overview

ADAVDAVNACNECDEI INNNFEFOWORRPMRMAOATIDTIOUONCNT DMT6010LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) max 8mΩ @ VGS = 10V 12mΩ @ VGS = 4.5V ID max TA = 25°C 14.0A 11.

Key Features

  • 100% Unclamped Inductive Switch (UIS) Test in Production.
  • High Conversion Efficiency.
  • Low RDS(ON).
  • Minimizes On-State Losses.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.

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