DMT8012LSS Datasheet | Diodes Incorporated

80V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 80V RDS(ON) Max 16.5mΩ @ VGS = 10V 20mΩ @ VGS = 4.5V ID Max TA = +25°C 9.7A 8.8A Features and Benefits - 100% Unclamped Inductive Switch (UIS) Test in Production - High Conversion Efficiency - Low RDS(ON) - Minimizes On-State Losses - Low Input Capacitance - Fast Switching Speed - Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - Qualified to AEC-Q101 Standards for High Reliability Description and Applications This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is...