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DMTH6004LPS - N-Channel MOSFET

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Primary Switch in Isolated DC-DC Synchronous Rectifier Load Swit

Features

  • BVDSS 60V RDS(ON) Max 3.1mΩ @ VGS = 10V 4.5mΩ @ VGS = 4.5V ID TC = +25°C (Note 8) 100A 100A.
  • Rated to +175°C.
  • Ideal for High Ambient Temperature Environments.
  • 100% Unclamped Inductive Switching.
  • Ensures More Reliable and Robust End.

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Full PDF Text Transcription

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A D VNAEN CWEPDRIONDFUOCRTM A T I O N Green DMTH6004LPS 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features BVDSS 60V RDS(ON) Max 3.1mΩ @ VGS = 10V 4.5mΩ @ VGS = 4.5V ID TC = +25°C (Note 8) 100A 100A  Rated to +175°C – Ideal for High Ambient Temperature Environments  100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application  Low RDS(ON) – Minimizes Power Losses  Low Qg – Minimizes Switching Losses  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
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