DSS4160FDB transistor equivalent, 60v dual npn low vce(sat) transistor.
* BVCEO > 60V
* IC = 1A High Continuous Collector Current
* RCE(SAT) = 180mΩ for a Low Equivalent On-Resistance
* Low Saturation Voltage VCE(SAT) < 220mV .
* RθJA Efficient, 40% Lower than SOT26
* Low Profile 0.6mm High Package for Thin Applications
* Totally Lead.
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