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Diodes Semiconductor Electronic Components Datasheet

DST857BDJ Datasheet

DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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DST857BDJ pdf
www.DDaStaSThe8et54U7.cBomDJ
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Complementary NPN Type Available (DST847BDJ)
Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
“Green” Device (Note 2)
Ultra Small Package
Mechanical Data
Case: SOT-963
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.0027 grams (approximate)
SOT-963
Top View
Device Schematic
Ordering Information
Notes:
Device
DST857BDJ-7
Packaging
SOT-963
1. No purposefully added lead. Halogen and Antimony Free.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
Shipping
10,000/Tape & Reel
Marking Information
TB TB = Product Type Marking Code
DST857BDJ
Document number: DS32037 Rev. 1 - 2
1 of 5
www.diodes.com
January 2010
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DST857BDJ Datasheet

DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

No Preview Available !

DST857BDJ pdf
www.DDaStaSThe8et54U7.cBomDJ
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 3)
Symbol
VCBO
VCEO
VEBO
IC
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Notes: 3. Device mounted on FR-4 PCB with minimum recommended pad layout.
Value
-50
-45
-5.0
-100
Value
300
417
-55 to +150
Unit
V
V
V
mA
Unit
mW
°C/W
°C
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = 0.9
1,000
100
D = Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 1 Transient Thermal Response
0.4
Single Pulse
RθJA(t) = r(t) * RθJA
RθJA = 370°C/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1/t2
0.3
10 0.2
RθJA(t) = r(t) * RθJA
RθJA = 370°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1/t2
10 100 1,000
Note 3
1 0.1
0.1
0.00001 0.001
0.1
10 1,000
t1, PULSE DURATION TIME (s)
Fig. 2 Single Pulse Maximum Power Dissipation
0
0 20 40 60 80 100 120 140 160
TA, AMBIENT TEMPERATURE (°C)
Fig. 3 Power Dissipation vs. Ambient Temperature
DST857BDJ
Document number: DS32037 Rev. 1 - 2
2 of 5
www.diodes.com
January 2010
© Diodes Incorporated


Part Number DST857BDJ
Description DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Maker Diodes
Total Page 5 Pages
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