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Diodes Semiconductor Electronic Components Datasheet

DT2041-04SO Datasheet

4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY

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DT2041-04SO
4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY
Product Summary
VBR (Min)
6V
IPP (Max)
10A
CT (Typ)
1.0pF
Description
The DT2041-04SO is a high-performance device suitable for
protecting four high speed I/Os. These devices are assembled in
SOT26 package and have high ESD surge capability and low
capacitance.
Applications
Typically used at high-speed ports such as USB 2.0, IEEE1394
(Firewire®, iLink), Serial ATA, DVI, HDMI, PCI.
SOT26
Features
Low Clamping Voltage: Typical 9V at 10A 100ns, TLP, I/O to
VSS; Typical 8V at 10A 100ns, TLP, VCC to VSS
IEC 61000-4-2 (ESD): Air ±30kV, Contact ±30kV
IEC61000-4-5(Lighting):10A,I/O to VSS; 12A, VCC to VSS
TLP Dynamic Resistance: 0.25
Low Channel Input Capacitance of 1.0pF Typical
4 Channel of ESD Protection
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: SOT26
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Copper Leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method208
Weight: 0.016 grams (Approximate)
Top View
Device Schematic
Circuit Schematic
Ordering Information (Note 4)
Product
DT2041-04SO-7
Compliance
Standard
Marking
BC4
Reel Size (inches)
7
Tape Width (mm)
8
Quantity per Reel
3,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
BAC147
BAC147
BC4 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
Note: ― ‖ Represents Internal Code
Date Code Key
Year
Code
Month
Code
2016
D
Jan Feb
12
DT2041-04SO
Document number: DS37726 Rev. 2 - 2
2017
E
Mar Apr
34
2018
F
May
5
Jun
6
2019
G
Jul Aug
78
1 of 6
www.diodes.com
2020
H
Sep Oct
9O
2021
I
Nov Dec
ND
October 2016
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DT2041-04SO Datasheet

4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY

No Preview Available !

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Peak Pulse Current, per IEC61000-4-5
Peak Pulse Current, per IEC61000-4-5
Peak Pulse Power, per IEC61000-4-5
Operating Voltage (DC)
ESD Protection Contact Discharge, per IEC61000-4-2
ESD Protection Air Discharge, per IEC61000-4-2
Operating Temperature
Storage Temperature
Symbol
IPP
IPP
PPP
VDC
VESD_CONTACT
VESD_AIR
TOP
TSTG
Value
±10
±12
105
5.5
±30
±30
-55 to +85
-55 to +150
DT2041-04SO
Unit
A
A
W
V
kV
kV
°C
°C
Conditions
I/O to VSS, 8/20 μs
VCC to VSS, 8/20 μs
I/O to VSS, 8/20 μs
I/O to VSS, VCC to VSS
I/O to VSS, VCC to VSS
I/O to VSS, VCC to VSS
Thermal Characteristics
Characteristic
Power Dissipation Typical (Note 5)
Thermal Resistance, Junction to Ambient Typical (Note 5)
Symbol
PD
RθJA
Value
300
417
Unit
mW
°C/W
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min Typ
Max Unit
Test Conditions
Reverse Working Voltage
Reverse Current (Note 6)
Reverse Breakdown Voltage
Forward Clamping Voltage
Holding Voltage
Trigger Voltage
Reverse Clamping Voltage (Note 7)
Reverse Clamping Voltage (Note 7)
ESD Clamping Voltage
Dynamic Resistance
Channel Input Capacitance
VRWM
IR
VBR
VF
VH
VTRIG
VC_5A
VC_10A
VESD
RDIF
CT
——
——
6
-1.0 -0.8
5.5
9
7.5
9
9
8
0.25
0.15
1.0
5.5
1
9
9.5
10.5
1.5
V I/O to VSS, VCC to VSS
μAVR = 5V, I/O to VSS, VCC to VSS
V IR = 1mA, I/O to VSS, VCC to VSS
V IF = -15mA, I/O to VSS, VCC to VSS
V
V
V IPP = 5A, I/O to VSS, 8/20 μs
V IPP = 10A, I/O to VSS, 8/20 μs
V TLP, 10A, tp = 100ns, I/O to VSS
TLP, 10A, tp = 100ns, VCC to VSS
TLP, 10A, tp = 100ns, I/O to VSS
TLP, 10A, tp = 100ns, VCC to VSS
pF VI/O = 2.5V, VCC=5V, f = 1MHz
Variation of Channel Input Capacitance
CT
0.02
pF
VSS = 0V, VI/O = 2.5V, f =1MHz,
I/O_x to VSS I/O_y to VSS
Notes:
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout, which can be found on our website
at http://www.diodes.com/package-outlines.html.
6. Short duration pulse test used to minimize self-heating effect.
7. Clamping voltage value is based on an 8x20µs peak pulse current (Ipp) waveform.
DT2041-04SO
Document number: DS37726 Rev. 2 - 2
2 of 6
www.diodes.com
October 2016
© Diodes Incorporated


Part Number DT2041-04SO
Description 4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY
Maker Diodes
Total Page 6 Pages
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