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Diodes Semiconductor Electronic Components Datasheet

DXTP07100BFG Datasheet

100V PNP HIGH PERFORMANCE TRANSISTOR

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DXTP07100BFG
100V PNP HIGH PERFORMANCE TRANSISTOR IN POWERDI3333-8
Features
BVCEO > -100V
Small Form Factor Thermally Efficient Package.
Enables Higher Density End Products
IC = -2A High Continuous Current
ICM = -6A Peak Pulse Current
Low Saturation Voltage VCE(sat) < -250mV @ -1A
Complementary NPN Type: DXTN07100BFG
Rated to +175°C—Ideal For High Temperature Environment
Wettable Flank For Improved Optical Inspection
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: PowerDI®3333-8
Case Material: Molded Plastic. “Green” Molding Compound
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish—Matte Tin Solderable per MIL-STD-202,
Method 208
Weight: 0.03 grams (Approximate)
Applications
High Side Switch
MOSFET or IGBT Gate Driving
PowerDI3333-8 (SWP) (Type UX)
Top View
C
C
C
C
B
E
E
E
Pin1
Bottom View
Equivalent Circuit
Device Symbol
Ordering Information (Notes 4)
Part Number
DXTP07100BFG-7
Compliance
AEC-Q101
Marking
2H8
Reel Size (inches)
7
Tape Width (mm)
12
Quantity per Reel
2000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
PowerDI3333-8 (SWP) (Type UX)
2H8
2H8= Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 18 = 2018)
WW = Week Code (01 to 53)
DXTP07100BFG
Document Number DS41049 Rev.1 - 2
1 of 7
www.diodes.com
October 2018
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DXTP07100BFG Datasheet

100V PNP HIGH PERFORMANCE TRANSISTOR

No Preview Available !

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
DXTP07100BFG
Value
-120
-100
-7
-2
-6
Unit
V
V
V
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Power Dissipation
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads (Note 8)
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 7)
(Note 5)
(Note 6)
(Note 7)
Symbol
PD
RϴJA
RϴJL
TJ, TSTG
Value
0.9
2.1
3.1
140
65
44
8.5
-55 to +175
Unit
W
W
W
°C/W
°C/W
°C/W
°C/W
°C
ESD Ratings (Note 9)
Characteristic
Electrostatic Discharge—Human Body Model
Electrostatic Discharge—Machine Model
Symbol
ESD HBM
ESD MM
Value
4000
400
Unit
V
V
JEDEC Class
3A
C
Notes:
5. For a device mounted with the collector tab on MRP FR4-PCB; device is measured under still air conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted on 25mm × 25mm 2oz copper.
7. Same as Note 5, except the device is mounted on 50mm × 50mm 2oz copper.
8. Thermal resistance from junction to solder-point (at the collector tab).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
DXTP07100BFG
Document Number DS41049 Rev.1 - 2
2 of 7
www.diodes.com
October 2018
© Diodes Incorporated


Part Number DXTP07100BFG
Description 100V PNP HIGH PERFORMANCE TRANSISTOR
Maker Diodes
Total Page 7 Pages
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