Download FMMT634Q Datasheet PDF
FMMT634Q page 2
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FMMT634Q Description

This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications.

FMMT634Q Key Features

  • BVCEO > 100V
  • IC = 900mA high Continuous Collector Current
  • ICM = 5A Peak Pulse Current
  • 625mW Power dissipation
  • hFE > 5k up to 2A for high current gain hold up
  • plementary PNP Type: FMMT734Q
  • Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability
  • PPAP Capable (Note 4)

FMMT634Q Applications

  • Matte Tin Plated Leads, Solderable per