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FZT658 Datasheet

400V NPN HIGH VOLTAGE TRANSISTOR

No Preview Available !

A Product Line of
Green Diodes Incorporated
FZT658
400V NPN HIGH VOLTAGE TRANSISTOR IN SOT223
Features
BVCEO > 400V
IC = 500mA High Continuous Current
ICM = 1A Peak Pulse Current
Low Saturation Voltage VCE(SAT) < 250mV @ 50mA
hFE > 40 Specified up to 200mA for High Current Gain Hold-Up
Complementary PNP Type: FZT758
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT223
Case Material: Molded Plastic. “Green” Molding Compound;
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
SOT223
Top View
Device Symbol
Top View
Pin-Out
Ordering Information (Note 4)
Product
FZT658TA
Marking
FZT658
Reel Size (inches)
7
Tape Width (mm)
12
Quantity per Reel
1,000
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
SOT223
FZT
658
FZT 658 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
FZT658
Document Number DS33153 Rev. 6 - 2
1 of 7
www.diodes.com
June 2015
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

FZT658 Datasheet

400V NPN HIGH VOLTAGE TRANSISTOR

No Preview Available !

A Product Line of
Diodes Incorporated
FZT658
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Power Dissipation
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance Junction to Lead
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 7)
(Note 8)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
Symbol
PD
RJA
RJL
TJ, TSTG
Value
400
400
7
0.5
1
Value
3.0
2.0
1.6
1.2
41.7
62.5
78.1
104
12.9
-55 to +150
Unit
V
V
V
A
A
Unit
W
°C/W
°C
ESD Ratings (Note 10)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
Notes:
5. For a device mounted with the collector lead on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under
still air conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper.
7. Same as Note 5, except the device is mounted on 25mm x 25mm 1oz copper.
8. Same as Note 5, except the device is mounted on minimum recommended pad layout.
9. Thermal resistance from junction to solder-point (at the end of the collector lead).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FZT658
Document Number DS33153 Rev. 6 - 2
2 of 7
www.diodes.com
June 2015
© Diodes Incorporated


Part Number FZT658
Description 400V NPN HIGH VOLTAGE TRANSISTOR
Maker Diodes
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FZT658 Datasheet PDF






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