FZT751Q Overview
This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.
FZT751Q Key Features
- BVCEO > -60V
- IC = -3A High Continuous Current
- ICM = -6A Peak Pulse Current
- Low Saturation Voltage VCE(sat) < -300mV @ -1A
- plementary NPN Type: DIODES™ FZT651Q
- Lead-Free Finish; RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- The DIODES™ FZT751Q is suitable for automotive
FZT751Q Applications
- Matte Tin Plated Leads, Solderable per
