G4812SS Key Features
- DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver
- Low RDS(ON)
- minimizes conduction losses
- Low VSD
- reducing the losses due to body diode conduction
- Low Qrr
- lower Qrr of the integrated Schottky reduces body diode switching losses
- Low gate capacitance (Qg/Qgs) ratio
- reduces risk of shoot-through or cross conduction currents at high frequencies
- Avalanche rugged