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Diodes Semiconductor Electronic Components Datasheet

MJD32C Datasheet

100V PNP HIGH VOLTAGE TRANSISTOR

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Features
BVCEO > -100V
IC = -3A high Continuous Collector Current
ICM = -5A Peak Pulse Current
Ideal for Power Switching or Amplification Applications
Complementary NPN Type: MJD31C
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
MJD32C
100V PNP HIGH VOLTAGE TRANSISTOR IN TO252
Mechanical Data
Case: TO252 (DPAK)
Case Material: Molded Plastic, "Green" Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.34 grams (Approximate)
TO252 (DPAK)
Top View
C
B
E
Device Schematic
Pin Out Configuration
Top View
Ordering Information (Note 4)
Product
MJD32C-13
Compliance
AEC-Q101
Marking
MJD32C
Reel size (inches)
13
Tape width (mm)
16
Quantity per reel
2,500
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green"
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
MJD32C = Product Type Marking Code
= Manufacturers’ code marking
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 16 = 2016)
WW = Week Code (01 - 53)
MJD32C
Document number: DS31624 Rev. 7 - 2
1 of 7
www.diodes.com
June 2016
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

MJD32C Datasheet

100V PNP HIGH VOLTAGE TRANSISTOR

No Preview Available !

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Continuous Base Current
Power Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
PD
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Power Dissipation
Characteristic
Thermal Resistance, Junction to Ambient Air
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 7)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
Symbol
PD
RθJA
RθJL
TJ, TSTG
Value
-100
-100
-6
-3
-5
-1
15
Value
3.9
2.1
1.6
32
59
80
8.4
-55 to +150
MJD32C
Unit
V
V
V
A
A
A
W
Unit
W
C/W
C
ESD Ratings (Note 9)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
Notes:
5. For a device mounted with the exposed collector pad on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
6. Same as note (5), except mounted on 25mm x 25mm 1oz copper.
7. Same as note (5), except mounted on minimum recommended pad (MRP) layout.
8. Thermal resistance from junction to solder-point (on the exposed collector pad).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
MJD32C
Document number: DS31624 Rev. 7 - 2
2 of 7
www.diodes.com
June 2016
© Diodes Incorporated


Part Number MJD32C
Description 100V PNP HIGH VOLTAGE TRANSISTOR
Maker Diodes
Total Page 7 Pages
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