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ZTX453 Datasheet

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

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Features
BVCEO > 100V (ZTX453)
ICM = 2A Peak Pulse Current
IC = 1A High Continuous Current
PD = 1W Power Dissipation
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
ZTX453
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
Mechanical Data
Case: E-Line
Case Material: Molded Plastic. ―Green‖ Molding Compound. UL
Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Plated Leads, Solderable per MIL-
STD-202, Method 208
Weight: 159mg (Approximate)
C
B
E-Line
E
Device Symbol
Top View
Pin-Out
Ordering Information (Note 4)
Notes:
Part Number
ZTX453
ZTX453STZ
Compliance
Standard
Standard
Marking
ZTX 453
ZTX 453
Quantity
4000 Bulk
2000 Taped
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZTX
445533
ZTX 453 = Product Type Marking Code
ZTX453
Document number: DS33268 Rev. 3 - 2
1 of 5
www.diodes.com
November 2016
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

ZTX453 Datasheet

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

No Preview Available !

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Dissipation at TA = +25°C
Symbol
VCBO
VCEO
VEBO
IC
ICM
PD
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Operating and Storage Temperature Range
Symbol
TJ, TSTG
Value
120
100
5
1
2
1
Value
-55 to +150
ZTX453
Unit
V
V
V
A
A
W
Unit
°C
ESD Ratings (Note 6)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
8,000
400
Unit
V
V
JEDEC Class
3B
C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic (Note 5)
Symbol
Min
Collector-Base Breakdown Voltage
BVCBO
120
Collector-Emitter Breakdown Voltage
BVCEO
100
Emitter-Base Breakdown Voltage
BVEBO
5
DC Current Gain
hFE 40
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(SAT)
VBE(SAT)
Collector-Cutoff Current
Emitter-Cutoff Current
ICBO
IEBO
Gain Bandwidth Product
Collector-Base Capacitance
fT
CCBO
150
Output Capacitance
COBO
Notes:
5. Short duration pulse test used to minimize self-heating effect.
6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Max
200
0.7
1.3
0.1
0.1
3.0
15
Unit
V
V
V
V
V
µA
µA
MHz
pF
pF
Test Condition
IC = 100µA, IB = 0
IC = 10mA, IB = 0
IE = 100µA, IC = 0
VCE = 10V, IC = 150mA, VCE = 10V, IC = 1A
IC = 150mA, IB = 15mA
IC = 150mA, IB = 15mA
VCB = 100V
VEB = 4V
VCE = 10V, IC = 50mA, f = 100MHz
VCB = 10V, f = 1MHz
VCB = 10V, f = 1MHz
ZTX453
Document number: DS33268 Rev. 3 - 2
2 of 5
www.diodes.com
November 2016
© Diodes Incorporated


Part Number ZTX453
Description NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
Maker Diodes
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ZTX453 Datasheet PDF






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