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ZVN4525E6 - 250V N-CHANNEL ENHANCEMENT MODE MOSFET

General Description

This 250V enhancement mode N-channel MOSFET provides users with a competitive specification.

It offers efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdowns.

Key Features

  • High Voltage.
  • Low On-Resistance.
  • Fast Switching Speed.
  • Low Threshold.
  • Low Gate Drive.
  • Complementary P-Channel Type ZVP4525E6.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ZVN4525E6 250V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 250V Max RDS(ON) 8.5Ω @ VGS = 10V Max ID TA = +25C 230mA Description and Applications This 250V enhancement mode N-channel MOSFET provides users with a competitive specification. It offers efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdowns. Applications benefiting from this device include a variety of telecom and general high-voltage circuits. SOT89 and SOT223 versions are also available.