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ZVN4525E6 Datasheet

250V N-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

Product Summary
V(BR)DSS
250V
Max RDS(on)
8.5@ VGS = 10V
Max ID
TA = +25°C
230mA
Description and Applications
This 250V enhancement mode N-channel MOSFET provides users
with a competitive specification. It offers efficient power handling
capability, high impedance and is free from thermal runaway and
thermally induced secondary breakdowns. Applications benefiting
from this device include a variety of Telecom and general high-
voltage circuits.
SOT89 and SOT223 versions are also available.
Earth Recall and Dialing Switches
Electronic Hook Switches
High Voltage Power MOSFET Drivers
Telecom Call Routers
Solid State Relays
SOT26
ZVN4525E6
250V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
High voltage
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Complementary P-channel Type ZVP4525E6
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: SOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.015 grams (Approximate)
Top View
Pinout Top-view
Device symbol
Ordering Information (Note 4)
Part Number
ZVN4525E6TA
ZVN4525E6TC
Reel Size (inch)
7
13
Tape Width (mm)
8
8
Quantity Per Reel
3,000
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
SOT26
N52
N52 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M or M = Month (ex: 9 = September)
Date Code Key
Year
2015
Code
C
2016
D
Month
Code
Jan Feb
12
2017
E
Mar
3
ZVN4525E6
Datasheet Number: DS33381 Rev. 2 – 2
2018
F
Apr
4
2019
G
May
5
2020
H
Jun
6
1 of 7
www.diodes.com
2021
I
2022
J
2023
K
Jul Aug Sep Oct
78 9O
2024
L
Nov
N
2025
M
Dec
D
March 2015
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

ZVN4525E6 Datasheet

250V N-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

ZVN4525E6
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
VGS = 10V
Pulsed Drain Current (Note 6)
TA=+25°C (Note 4)
TA=+70°C (Note 4)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Symbol
VDSS
VGS
ID
IDM
IS
ISM
Value
250
±40
230
183
1.44
1.1
1.44
Unit
V
V
mA
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Power Dissipation at TA=+25°C (Note 4)
Linear Derating Factor
PD 1.1
8.8
Junction to Ambient (Note 4)
RθJA
113
Junction to Ambient (Note 5)
RθJA
65
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
Notes:
4. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
5. For a device surface mounted on FR4 PCB measured at t 5 secs.
6. Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal.
Unit
W
mW/°C
°C/W
°C/W
°C
NB High Voltage Applications
For high voltage applications, the appropriate industry sector guidelines should be considered with regards to voltage spacing between conductors.
Thermal Characteristics
ZVN4525E6
Datasheet Number: DS33381 Rev. 2 – 2
2 of 7
www.diodes.com
March 2015
© Diodes Incorporated


Part Number ZVN4525E6
Description 250V N-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
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