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ZX5T851G - 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR

Key Features

  • BVCEO > 60V.
  • IC = 6A High Continuous Collector Current.
  • ICM = 20A Peak Pulse Current.
  • Low Saturation Voltage VCE(sat) < -60mV @ -1A.
  • RSAT = 35mΩ for a Low Equivalent On-Resistance.
  • hFE Specified up to 10A for a High Gain Hold-Up.
  • Complementary PNP Type: ZX5T951G.
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • Case: SOT.

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Other Datasheets by Diodes Incorporated

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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A Product Line of Diodes Incorporated Green ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features  BVCEO > 60V  IC = 6A High Continuous Collector Current  ICM = 20A Peak Pulse Current  Low Saturation Voltage VCE(sat) < -60mV @ -1A  RSAT = 35mΩ for a Low Equivalent On-Resistance  hFE Specified up to 10A for a High Gain Hold-Up  Complementary PNP Type: ZX5T951G  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Mechanical Data  Case: SOT223  Case Material: Molded Plastic.