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ZXGD3109N8 - SYNCHRONOUS MOSFET CONTROLLER

General Description

The ZXGD3109N8 is intended to drive a MOSFET configured as an ideal diode replacement.

The device is comprised of a high-voltage detector stage and gate driver.

Key Features

  • of this IC are the Minimum Off-Time (TOFF) and Minimum On-Time (TON). These features blanket the noise generated during the turn-on and turn-off instances of the power FET. Also Light Load Detection (LLD) for improved efficiency at light and no load, where synchronous rectification is no more beneficial. Other features include, Undervoltage Lockout (UVLO) and low turn-off threshold voltage for improved efficiency. Features.
  • Frequency of Operation Up to 500kHz.
  • Suitable for Discontinuo.

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Full PDF Text Transcription for ZXGD3109N8 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for ZXGD3109N8. For precise diagrams, and layout, please refer to the original PDF.

OBSOLETE – PART DISCONTINUED PART OBSOLETE NO ALTERNATE PART ZXGD3109N8 SYNCHRONOUS MOSFET CONTROLLER IN SO-8 Description The ZXGD3109N8 is intended to drive a MOSFET con...

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R IN SO-8 Description The ZXGD3109N8 is intended to drive a MOSFET configured as an ideal diode replacement. The device is comprised of a high-voltage detector stage and gate driver. The detector monitors the voltage between the drain and the source of the MOSFET, and if this voltage is less than the turn-on threshold voltage of the controller, a positive voltage is applied to the MOSFET’s Gate Pin. As the load current decays to zero, and the voltage between the drain and source of the MOSFET increases beyond the turn-off threshold value, the MOSFET is rapidly turned off. Intelligent features of this IC are the Minimum Off

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