ZXMC10A816N8 - Dual MOSFET

Diodes

Datasheet Details

This new generation complementary dual MOSFET

low on-resistance achievable with low gate drive. D1 D2 Features.
100 V Complementary in SOIC package Low on-resistance Fast switching speed Low voltage (VGS = 4.5 V) gate drive G1 S1 Q1 N-Channel G2 S2 Q2 P-Channel.

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Published: Jul 7, 2009 |