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ZXMC3F31DN8 - 30V SO8 Complementary dual MOSFET

General Description

This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance making it ideal for power management and battery charging functions.

Key Features

  • Low on-resistance.
  • 4.5V gate drive capability.
  • Low profile SOIC package D1 D2.

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Full PDF Text Transcription (Reference)

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ZXMC3F31DN8 30V SO8 Complementary dual enhancement mode MOSFET Summary Device V(BR)DSS (V) QG (nC) RDS(on) (Ω) ID (A) Q1 30 12.9 0.024 @ VGS= 10V 7.3 0.039 @ VGS= 4.5V 5.7 Q2 -30 12.7 0.045 @ VGS= -10V 5.3 0.080 @ VGS= -4.5V 4 Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance making it ideal for power management and battery charging functions. Features • Low on-resistance • 4.