Datasheet4U Logo Datasheet4U.com

ZXMHC3F381N8 - H Bridge

Description

This new generation complementary MOSFET H-Bridge

Features

  • low on-resistance achievable with low gate drive. P1G P1S/P2S P2G Features.
  • 2 x N + 2 x P channels in a SOIC package Low voltage (VGS = 4.5 V) gate drive P1D/N1D P2D/N2D.

📥 Download Datasheet

Datasheet preview – ZXMHC3F381N8

📁 Similar Datasheet

  • ZXMHC3A01T8 - COMPLEMENTARY 30V MOSFET (Zetex Semiconductors)
  • ZXMHC10A07T8 - COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE (Zetex Semiconductors)
  • ZXMHC6A07T8 - COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE (Zetex Semiconductors)
  • ZXMHN6A07T8 - 60V N-CHANNEL MOSFET H-BRIDGE (Zetex Semiconductors)
  • ZXM240128A6 - Display Module (Huizhou City)
  • ZXM41N0F - SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET (Zetex Semiconductors)
  • ZXM41N10F - N-Channel MOSFET (Zetex Semiconductors)
  • ZXM61N02 - 20V N-CHANNEL MOSFET (Zetex Semiconductors)
  • ZXM61N02F - 20V N-Channel MOSFET (Zetex Semiconductors)
  • ZXM61N03F - 30V N-Channel MOSFET (Zetex Semiconductors)
Other Datasheets by Diodes

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com A Product Line of Diodes Incorporated ZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V(BR)DSS QG RDS(on) 33mΩ @ VGS= 10V N-CH 30V 9.0nC 60mΩ @ VGS= 4.5V 55mΩ @ VGS= -10V P-CH -30V 12.7nC 80mΩ @ VGS= -4.5V -3.3A 3.9A -4.1A ID TA= 25°C 5.0A Description This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive. P1G P1S/P2S P2G Features • • 2 x N + 2 x P channels in a SOIC package Low voltage (VGS = 4.5 V) gate drive P1D/N1D P2D/N2D Applications • • N1G N2G DC Motor control DC-AC Inverters N1S/N2S Ordering information Device ZXMHC3F381N8TC Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500 Device marking ZXMHC 3F381 Issue 1.
Published: |