ZXMN10A11G Datasheet 100V N-CHANNEL ENHANCEMENT MODE MOSFET

Manufacturer: Diodes Incorporated

ZXMN10A11G 100v n-channel enhancement mode mosfet by Diodes Incorporated - Datasheet Preview

Datasheet Details

Part number	ZXMN10A11G
Manufacturer	Diodes Incorporated
File Size	570.74 KB
Description	100V N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet	ZXMN10A11G Datasheet

General Description

and Applications This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

 Motor Control  DC-DC Converters  Power Management Functions  Uninterrupted Power Supply

Overview

ADVANCE INFORMATION ZXMN10A11G Green 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(on) 350mΩ @ VGS = 10V 450mΩ @ VGS = 6.0V ID TA = +25°C 2.4A 2.

Key Features

Fast Switching Speed.
Low Gate Drive.
Low Input Capacitance.
Lead-Free Finish; RoHS Compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3).
Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
Case: SOT223.
Case Material: Molded Plastic; UL Flammability Classification Rating 94V-0.
Moisture Sensitivity: Level 1 per J-STD-020.
Terminals: Finish - Matte Tin Annealed over Copper Leadframe; Solderable per MIL-ST.

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