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Diodes Semiconductor Electronic Components Datasheet

ZXMN4A06GTA Datasheet

40V N-CHANNEL MOSFET

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ZXMN4A06G
Green
40V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
40V
RDS(ON)
0.05Ω @ VGS = 10V
ID
TA = +25°C
7A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
DC-DC Converters
Audio Output Stages
Relay and Solenoid Driving
Motor Control
SOT223
Features
Low On-Resistance
Fast Switching Speed
Low Threshold
Low Gate Drive
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Datasheet (ZXMN4A06GQ)
Mechanical Data
Case: SOT223
Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.112 grams (Approximate)
D
Top View
Pin Out - Top View
G
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
ZXMN4A06GTA
ZXMN4A06GTC
Compliance
Standard
Standard
Case
SOT223
SOT223
Packaging
1,000/Tape & Reel
4,000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT223
ZXMN
4A06
ZXMN4A06 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 6 = 2016)
WW or WW = Week Code (01 to 53)
ZXMN4A06G
Document number: DS33545 Rev. 5 - 2
1 of 7
www.diodes.com
April 2016
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

ZXMN4A06GTA Datasheet

40V N-CHANNEL MOSFET

No Preview Available !

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current
VGS = 10V
Pulsed Drain Current
VGS= 10V
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
(Note 6)
TA = +70°C (Note 6)
(Note 5)
(Note 7)
(Note 6)
(Note 7)
Symbol
VDSS
VGS
ID
IDM
IS
ISM
ZXMN4A06G
Value
Unit
40
V
20
V
7
5.6
A
5
22
A
5.4
A
22
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Power Dissipation
Linear Derating Factor
Characteristic
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 7)
(Note 6)
Symbol
PD
RθJA
TJ, TSTG
Value
2
16
3.9
31
62.5
32.2
-55 to +150
Notes:
5. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device surface mounted on FR-4 PCB measured at t 5 seconds.
7. Repetitive rating 25mm x 25mm FR-4 PCB, D = 0.05, pulse width 10μs - pulse width limited by maximum junction temperature.
Thermal Characteristics
Unit
W
mW/°C
°C/W
°C
ZXMN4A06G
Document number: DS33545 Rev. 5 - 2
2 of 7
www.diodes.com
April 2016
© Diodes Incorporated


Part Number ZXMN4A06GTA
Description 40V N-CHANNEL MOSFET
Maker Diodes
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