Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current
VGS = 10V
Pulsed Drain Current
VGS= 10V
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
(Note 7)
TA = +70°C (Note 7)
(Note 6)
(Note 8)
(Note 7)
(Note 8)
Symbol
VDSS
VGS
ID
IDM
IS
ISM
ZXMP10A17E6Q
Value
-100
20
-1.6
-1.3
-1.3
-7.7
-2.1
-7.7
Unit
V
V
A
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Power Dissipation
Linear Derating Factor
(Note 6)
(Note 7)
PD
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 6)
(Note 7)
RθJA
TJ, TSTG
Value
1.1
8.8
1.7
13.7
113
73
-55 to +150
Unit
W
mW/°C
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 9)
Forward Transconductance (Notes 9 & 10)
Diode Forward Voltage (Note 9)
Reverse Recovery Time (Note 10)
Reverse Recovery Charge (Note 10)
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 11)
Total Gate Charge (Note 11)
Gate-Source Charge (Note 11)
Gate-Drain Charge (Note 11)
Turn-On Delay Time (Note 11)
Turn-On Rise Time (Note 11)
Turn-Off Delay Time (Note 11)
Turn-Off Fall Time (Note 11)
Symbol Min
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
gfs
VSD
trr
Qrr
-100
-2.0
Ciss
Coss
Crss
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Typ
2.8
-0.85
33
48
424
36.6
29.8
7.1
10.7
1.7
3.8
3
3.5
13.4
7.2
Max
-0.5
100
-4.0
0.350
0.450
-0.95
Unit
Test Condition
V ID = -250µA, VGS = 0V
µA VDS = -100V, VGS = 0V
nA VGS = 20V, VDS = 0V
V ID = -250µA, VDS = VGS
Ω VGS = -10V, ID = -1.4A
VGS = -6V, ID = -1.2A
S VDS = -15V, ID = -1.4A
V IS = -1.7A, VGS = 0V
ns
nC IS = -1.5A, di/dt = 100A/µs
pF
pF VDS = -50V, VGS = 0V
f = 1MHz
pF
nC VGS = -6V
nC
nC VGS = -10V
nC
VDS = -50V
ID = -1.4A
ns
ns VDD = -50V, VGS = -10V
ns ID = -1A, RG 6.0Ω
ns
Notes:
6. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
7. Same as Note 6, except the device is measured at t 5 sec.
8. Same as Note 6, except the device is pulsed with D = 0.05 and pulse width 10µs. The pulse current is limited by the maximum junction temperature.
9. Measured under pulsed conditions. Pulse width 300µs; duty cycle 2%.
10. For design aid only, not subject to production testing.
11. Switching characteristics are independent of operating junction temperatures.
ZXMP10A17E6Q
Document Number DS36689 Rev. 3 - 2
2 of 7
www.diodes.com
March 2015
© Diodes Incorporated
