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ZXMP10A17E6Q Datasheet

P-Channel MOSFET

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ZXMP10A17E6Q
100V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-100V
RDS(ON)
350m@ VGS= -10V
450m@ VGS= -6.0V
ID
TA = +25°C
-1.6A
-1.4A
Description
This MOSFET is designed to minimize the on-state resistance and yet
maintain superior switching performance, making it ideal for high
efficiency power management applications.
Applications
Motor Control
DC-DC Converters
Power Management Functions
Uninterrupted Power Supply
SOT26
Features and Benefits
Fast Switching Speed
Low Gate Drive
Low Input Capacitance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT26
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram Below
Terminals: Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.018 grams (Approximate)
Top View
Equivalent Circuit
Ordering Information (Notes 4 & 5)
Part Number
ZXMP10A17E6QTA
Qualification
Automotive
Case
SOT26
Packaging
3,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT26
1A17 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M or M = Month (ex: 9 = September)
Date Code Key
Year
Code
2015
C
2016
D
Month
Code
Jan Feb
12
ZXMP10A17E6Q
Document Number DS36689 Rev. 3 - 2
2017
E
Mar
3
2018
F
Apr
4
2019
G
2020
H
2021
I
May Jun
56
1 of 7
www.diodes.com
Jul
7
2022
J
Aug
8
2023
K
Sep
9
2024
L
Oct
O
2025
M
2026
N
Nov Dec
ND
March 2015
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

ZXMP10A17E6Q Datasheet

P-Channel MOSFET

No Preview Available !

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current
VGS = 10V
Pulsed Drain Current
VGS= 10V
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
(Note 7)
TA = +70°C (Note 7)
(Note 6)
(Note 8)
(Note 7)
(Note 8)
Symbol
VDSS
VGS
ID
IDM
IS
ISM
ZXMP10A17E6Q
Value
-100
20
-1.6
-1.3
-1.3
-7.7
-2.1
-7.7
Unit
V
V
A
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Power Dissipation
Linear Derating Factor
(Note 6)
(Note 7)
PD
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 6)
(Note 7)
RθJA
TJ, TSTG
Value
1.1
8.8
1.7
13.7
113
73
-55 to +150
Unit
W
mW/°C
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 9)
Forward Transconductance (Notes 9 & 10)
Diode Forward Voltage (Note 9)
Reverse Recovery Time (Note 10)
Reverse Recovery Charge (Note 10)
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 11)
Total Gate Charge (Note 11)
Gate-Source Charge (Note 11)
Gate-Drain Charge (Note 11)
Turn-On Delay Time (Note 11)
Turn-On Rise Time (Note 11)
Turn-Off Delay Time (Note 11)
Turn-Off Fall Time (Note 11)
Symbol Min
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
gfs
VSD
trr
Qrr
-100
-2.0

Ciss
Coss
Crss
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf

Typ
2.8
-0.85
33
48
424
36.6
29.8
7.1
10.7
1.7
3.8
3
3.5
13.4
7.2
Max
-0.5
100
-4.0
0.350
0.450
-0.95

Unit
Test Condition
V ID = -250µA, VGS = 0V
µA VDS = -100V, VGS = 0V
nA VGS = 20V, VDS = 0V
V ID = -250µA, VDS = VGS
VGS = -10V, ID = -1.4A
VGS = -6V, ID = -1.2A
S VDS = -15V, ID = -1.4A
V IS = -1.7A, VGS = 0V
ns
nC IS = -1.5A, di/dt = 100A/µs
pF
pF VDS = -50V, VGS = 0V
f = 1MHz
pF
nC VGS = -6V
nC
nC VGS = -10V
nC
VDS = -50V
ID = -1.4A
ns
ns VDD = -50V, VGS = -10V
ns ID = -1A, RG 6.0
ns
Notes:
6. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
7. Same as Note 6, except the device is measured at t 5 sec.
8. Same as Note 6, except the device is pulsed with D = 0.05 and pulse width 10µs. The pulse current is limited by the maximum junction temperature.
9. Measured under pulsed conditions. Pulse width 300µs; duty cycle 2%.
10. For design aid only, not subject to production testing.
11. Switching characteristics are independent of operating junction temperatures.
ZXMP10A17E6Q
Document Number DS36689 Rev. 3 - 2
2 of 7
www.diodes.com
March 2015
© Diodes Incorporated


Part Number ZXMP10A17E6Q
Description P-Channel MOSFET
Maker Diodes
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ZXMP10A17E6Q Datasheet PDF






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