ZXMS6004DN8 Datasheet N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET

Manufacturer: Diodes Incorporated

ZXMS6004DN8 n-channel self protected enhancement mode mosfet by Diodes Incorporated - Datasheet Preview

Datasheet Details

Part number	ZXMS6004DN8
Manufacturer	Diodes Incorporated
File Size	398.36 KB
Description	N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET
Datasheet	ZXMS6004DN8 Datasheet

General Description

The ZXMS6004DN8 is a dual self-protected low side MOSFET with logic level input.

It integrates over-temperature, overcurrent, overvoltage (active clamp) and ESD protected logic level functionality.

The ZXMS6004DN8 is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough.

Overview

ADVANCE INFORMATION ZXMS6004DN8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET® MOSFET Product Summary  Continuos Drain-Source Voltage: 60V  On-State Resistance: 500mΩ  Nominal Load Current (VIN = 5V): 1.

Key Features

Low Input Current.
Logic Level Input (3.3V and 5V).
Short Circuit Protection with Auto Restart.
Overvoltage Protection (Active Clamp).
Thermal Shutdown with Auto Restart.
Overcurrent Protection.
Input Protection (ESD).
High Continuous Current Rating.
Totally Lead-Free; RoHS compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3).

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