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Diodes Semiconductor Electronic Components Datasheet

ZXTN2007G Datasheet

30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR

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Green ZXTN2007G
30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
Features
BVCEO > 30V
IC = 7A Continuous Collector Current
ICM = 20A Peak Pulse Current
Low Saturation Voltage VCE(SAT) < 50mV Max @ 1A
RSAT = 28m@ 6.5A for Low Equivalent On-Resistance
hFE Specified up to 20A for High Gain Hold Up
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
SOT223
Mechanical Data
Case: SOT223
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Plated Leads. Solderable per
MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
Applications
DC-DC Converters
MOSFET Gate Drivers
Charging Circuits
Power Switches
Motor Control
Top View
Device Schematic
Pin-Out Top View
Ordering Information (Note 4)
Part Number
ZXTN2007GTA
Marking
ZXTN2007
Reel Size (inches)
7
Tape Width (mm)
12
Quantity per Reel
1,000
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT223
ZXTN
2007
ZXTN 2007 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5 = 2015)
WW or WW = Week Code (01 - 53)
ZXTN2007G
Document number: DS33657 Rev. 3 - 2
1 of 7
www.diodes.com
December 2015
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

ZXTN2007G Datasheet

30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR

No Preview Available !

ZXTN2007G
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Power Dissipation
Linear Derating Factor
(Note 5)
(Note 6)
PD
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 7)
RθJA
RθJA
RθJL
TJ, TSTG
Value
80
30
7
7
20
Value
3.0
24
1.6
12.8
42
78
8.8
-55 to +150
Unit
V
V
V
A
A
Unit
W
mW/°C
°C/W
°C
ESD Ratings (Note 8)
Characteristic
Electrostatic Discharge Human Body Model
Electrostatic Discharge Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
Notes:
5. For a device mounted with the collector lead on 52mm x 52mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady-state.
6. Same as Note 5, except the device is mounted on 25mm x 25mm 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTN2007G
Document number: DS33657 Rev. 3 - 2
2 of 7
www.diodes.com
December 2015
© Diodes Incorporated


Part Number ZXTN2007G
Description 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR
Maker Diodes
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ZXTN2007G Datasheet PDF






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