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Diodes Semiconductor Electronic Components Datasheet

2N7002 Datasheet

N-channel MOSFET

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2N7002
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
Features and Benefits
BVDSS
60V
RDS(ON) Max
7.5Ω @ VGS = 5V
ID Max
TA = +25°C
210mA
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Notes 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Motor Control
Power Management Functions
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Plated Leads. Solderable per MIL-
STD-202, Method 208 e3
Terminal Connections: See Diagram
Weight: 0.009 grams (Approximate)
Drain
SOT23
Gate
D
Top View
Source
Equivalent Circuit
GS
Top View
Ordering Information (Note 5)
Notes:
Part Number
2N7002-7-F
Compliance
Standard
Case
SOT23
Packaging
3,000/Tape & Reel
2N7002-13-F
Standard
SOT23
10,000/Tape & Reel
2N7002Q-7-F
Automotive
SOT23
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to https://www.diodes.com/quality/.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
K72
K72 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: F = 2018)
M = Month (ex: 9 = September)
Date Code Key
Year
2002
~
2018
Code
N
~
F
Month Jan Feb Mar
Code
1
2
3
2N7002
Document number: DS11303 Rev. 35 - 2
2019
G
Apr
4
2020
H
May
5
2021
I
2022
J
2023
K
Jun Jul Aug Sep
6 78 9
2024
L
Oct
O
1 of 5
www.diodes.com
2025
M
Nov
N
2026
N
Dec
D
July 2018
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

2N7002 Datasheet

N-channel MOSFET

No Preview Available !

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Drain-Gate Voltage RGS 1.0M
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
Continuous Drain Current (Note 7) VGS = 10V
Steady
State
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Continuous
Pulsed
TA = +25°C
TA = +85°C
TA = +100°C
TA = +25°C
TA = +85°C
TA = +100°C
Pulsed
Continuous
Symbol
VDSS
VDGR
VGSS
ID
ID
IS
IDM
Value
60
60
±20
±40
170
120
105
210
150
135
0.5
2
800
2N7002
Unit
V
V
V
mA
mA
A
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
(Note 6)
(Note 7)
(Note 6)
(Note 7)
(Note 7)
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
370
540
348
241
91
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
@ TC = +25°C
@ TC = +125°C
BVDSS
IDSS
IGSS
@ TJ = +25°C
@ TJ = +25°C
@ TJ = +125°C
VGS(TH)
RDS(ON)
ID(ON)
gFS
VSD
Ciss
Coss
Crss
Min
60
1.0
0.5
80
Gate Resistance
Rg 
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
SWITCHING CHARACTERISTICS (Note 9)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF





Notes:
6. Device mounted on FR-4 PCB, with minimum recommended pad layout.
7. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
2N7002
Document number: DS11303 Rev. 35 - 2
2 of 5
www.diodes.com
Typ
70
3.2
4.4
1.0
0.78
22
11
2.0
120
223
82
178
2.8
3.0
7.6
5.6
Max
1.0
500
±10
2.5
7.5
5.0
13.5
1.5
50
25
5.0
Unit
Test Condition
V VGS = 0V, ID = 10µA
µA VDS = 60V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250µA
VGS = 5.0V, ID = 0.05A
VGS = 10V, ID = 0.5A
VGS = 10V, ID = 0.5A
A VGS = 10V, VDS = 7.5V
mS VDS =10V, ID = 0.2A
V VGS = 0V, IS = 115mA
pF
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
pF
VDS = 0V, VGS = 0V,
f = 1.0MHz
pC VDS = 10V, ID = 250mA
VDD = 30V, ID = 0.2A,
ns RL = 150, VGEN = 10V,
RGEN = 25
July 2018
© Diodes Incorporated


Part Number 2N7002
Description N-channel MOSFET
Maker Diodes Incorporated
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2N7002 Datasheet PDF






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