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Diodes Semiconductor Electronic Components Datasheet

2N7002K Datasheet

N-CHANNEL ENHANCEMENT MODE MOSFET

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Product Summary
V(BR)DSS
60V
RDS(ON) max
2@ VGS = 10V
3@ VGS = 5V
ID max
TA = +25°C
380mA
310mA
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Motor Control
Power Management Functions
Backlighting
SOT23
2N7002K
N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 2kV
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208 e3
Weight: 0.008 grams (approximate)
Drain
D
ESD protected up to 2kV
Top View
Gate
Gate
Protection
Diode
Source
Equivalent Circuit
GS
Top View
Ordering Information (Note 4)
Notes:
Part Number
2N7002K-7
2N7002KQ-7
2N7002K-13
2N7002KQ-13
Compliance
Standard
Automotive
Standard
Automotive
Case
SOT23
SOT23
SOT23
SOT23
Packaging
3000/Tape & Reel
3000/Tape & Reel
10000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
K7K
Chengdu A/T Site
Date Code Key
Year
2006
Code
T
2007
U
2008
V
Month
Code
Jan Feb Mar
123
2N7002K
Document number: DS30896 Rev. 14 - 2
K7K
Shanghai A/T Site
K7K = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
2009
W
Apr
4
2010
X
May
5
2011
Y
Jun
6
2012
Z
Jul
7
1 of 6
www.diodes.com
2013
A
Aug
8
2014
B
Sep
9
2015
C
Oct
O
2016
D
Nov
N
2017
E
Dec
D
August 2013
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

2N7002K Datasheet

N-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
t<5s
Continuous Drain Current (Note 6) VGS = 5V
Steady
State
t<5s
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%) (Note 6)
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
ID
ID
IS
IDM
Value
60
±20
380
300
430
340
310
240
350
270
0.5
1.2
2N7002K
Units
V
V
mA
mA
mA
mA
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6 )
Operating and Storage Temperature Range
Steady State
t<5s
Steady State
t<5s
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
370
357
292
540
240
197
91
-55 to +150
Units
mW
°C/W
mW
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol Min
BVDSS
IDSS
IGSS
60
VGS(th) 1.0
Static Drain-Source On-Resistance
RDS(ON)
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
80
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Typ
1.6
0.75
30
4.2
2.9
133
0.3
0.2
0.08
3.9
3.4
15.7
9.9
Max
1.0
±10
2.5
2.0
3.0
1.1
50
25
5.0
Unit Test Condition
V VGS = 0V, ID = 10µA
µA VDS = 60V, VGS = 0V
µA VGS = ±20V, VDS = 0V
V VDS = 10V, ID = 1mA
VGS = 10V, ID = 0.5A
VGS = 5V, ID = 0.05A
ms VDS =10V, ID = 0.2A
V VGS = 0V, IS = 115mA
pF
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
pF
f = 1MHz , VGS = 0V, VDS = 0V
nC
nC VGS = 4.5V, VDS = 10V,
nC ID = 250mA
ns
ns VDD = 30V, VGS = 10V,
ns RG = 25, ID = 200mA
ns
2N7002K
Document number: DS30896 Rev. 14 - 2
2 of 6
www.diodes.com
August 2013
© Diodes Incorporated


Part Number 2N7002K
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes Incorporated
Total Page 6 Pages
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