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Diodes Semiconductor Electronic Components Datasheet

BAS40 Datasheet

SURFACE MOUNT SCHOTTKY BARRIER DIODE

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Product Summary @TA = +25°C
VRRM (V)
40
IO (mA)
200
VFmax (V)
1.0
IRmax (μA)
0.2
BAS40/ -04/ -05/ -06
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features and Benefits
Low Forward Voltage Drop
Fast Switching
PN Junction Guard Ring for Transient and ESD Protection
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3) 
Qualified to AEC-Q101 Standards for High Reliability
Description
200mA surface mount Schottky Barrier Diode in SOT23 package,
offers low forward voltage drop and fast switching capability, designed
with PN Junction Guard Ring for Transient and ESD Protection, totally
lead-free finish and RoHS compliant, ”Green” device.
Mechanical Data
Case: SOT23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208 e3
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Polarity: See Diagrams Below
Weight: 0.008 grams (approximate)
Top View
BAS40
BAS40-04
BAS40-05
BAS40-06
Ordering Information (Note 4 & 5)
Part Number
BAS40-7-F / BAS40Q-7-F
BAS40-04-7-F / BAS40-04Q-7-F
BAS40-05-7-F / BAS40-05Q-7-F
BAS40-06-7-F / BAS40-06Q-7-F
BAS40-13-F / BAS40Q-13-F
BAS40-04-13-F / BAS40-04Q-13-F
BAS40-05-13-F / BAS40-05Q-13-F
BAS40-06-13-F / BAS40-06Q-13-F
Case
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
Packaging
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
10000/Tape & Reel
10000/Tape & Reel
10000/Tape & Reel
10000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
5. Products manufactured with Date Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Products manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
BAS40/ -04/ -05/ -06
Document number: DS11006 Rev. 25 - 2
1 of 5
www.diodes.com
December 2013
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

BAS40 Datasheet

SURFACE MOUNT SCHOTTKY BARRIER DIODE

No Preview Available !

Marking Information
BAS40/ -04/ -05/ -06
Shanghai A/T Site
Chengdu A/T Site
xxx = Product Type Marking Code
K43 = BAS40
K44 = BAS40-04
K45 = BAS40-05
K46 = BAS40-06
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y̅ M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y̅ = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Year 1999
Code
K
2000
L
2001
M
Month
Code
Jan
1
Feb
2
2002
N
Mar
3
2003 2004 2005
P RS
Apr May
45
2006 2007 2008
TUV
Jun Jul
67
2009 2010 2011
WX Y
Aug Sep
89
2012
Z
Oct
O
2013 2014 2015
ABC
Nov Dec
ND
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current (Note 6)
Forward Surge Current (Note 6)
@ t < 1.0s
Symbol
VRRM
VRWM
VR
IFM
IFSM
Value
40
200
600
Unit
V
mA
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient Air (Note 6)
Operating Temperature Range
Storage Temperature Range
Symbol
PD
RJA
TJ
TSTG
Value
350
357
-55 to +125
-65 to +150
Unit
mW
°C/W
°C
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Reverse Breakdown Voltage (Note 7)
Forward Voltage
Reverse Leakage Current (Note 7)
Total Capacitance
Reverse Recovery Time
Symbol
V(BR)R
Min
40
VF 
IR 
CT 
trr 
Typ


20
4.0

Max

380
1000
200
5.0
5.0
Unit
V
mV
nA
pF
ns
Test Condition
IR = 10µA
tp < 300µs, IF = 1.0mA
tp < 300µs, IF = 40mA
tp < 300µs, VR = 30V
VR = 0V, f =1.0MHz
IF = IR = 10mA to IR = 1.0mA,
RL = 100
Notes:
6. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
7. Short duration pulse test used to minimize self-heating effect.
BAS40/ -04/ -05/ -06
Document number: DS11006 Rev. 25 - 2
2 of 5
www.diodes.com
December 2013
© Diodes Incorporated


Part Number BAS40
Description SURFACE MOUNT SCHOTTKY BARRIER DIODE
Maker Diodes Incorporated
Total Page 5 Pages
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