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Diodes Semiconductor Electronic Components Datasheet

BSS138 Datasheet

N-CHANNEL ENHANCEMENT MODE MOSFET

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Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
BSS138
N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
Case: SOT23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3
Terminal Connections: See Diagram
Weight: 0.008 grams (Approximate)
SOT23
Top View
Drain
Gate
Source
Equivalent Circuit
D
GS
Top View
Ordering Information (Note 5)
Notes:
Part Number
BSS138-7-F
BSS138-13-F
BSS138Q-7-F
Qualification
Commercial
Commercial
Automotive
Case
SOT23
SOT23
SOT23
Packaging
3000/Tape & Reel
10000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
Chengdu A/T Site
Shanghai A/T Site
K38 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test Site)
M = Date Code Marking for CAT (Chengdu Assembly/ Test Site)
Y or = Year (ex: E = 2017)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
1998
J
1999
K
2000
L
Month
Code
Jan Feb Mar
123
BSS138
Document number: DS30144 Rev. 21 - 2
2002
N
Apr
4
2016 2017 2018 2019 2020
D EF G H
May
5
Jun
6
Jul Aug
78
1 of 5
www.diodes.com
2021 2022 2023 2024 2025
I J KLM
Sep Oct Nov Dec
9OND
August 2017
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

BSS138 Datasheet

N-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Drain-Gate Voltage RGS 20K
Gate-Source Voltage
Continuous
Gate-Source Voltage
Non Repetitive, Pulse Width<50s
Drain Current
Continuous
Pulsed Drain Current (10μs Pulse Duty Cycle = 1%)
Symbol
VDSS
VDGR
VGSS
ID
IDM
Value
50
50
20
40
200
1
BSS138
Unit
V
V
V
V
mA
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
PD
RJA
TJ, TSTG
Value
300
417
-55 to +150
Unit
mW
C/W
C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Symbol Min Typ Max Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 7)
BVDSS 50 75 V VGS = 0V, ID = 250A
IDSS   0.5 µA VDS = 50V, VGS = 0V
IGSS
  100 nA VGS = 20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
VGS(TH) 0.5 1.2 1.5 V VDS = VGS, ID = 250A
RDS(ON)
1.4 3.5
VGS = 10V, ID = 0.22A
gFS 100   mS VDS = 25V, ID = 0.2A, f = 1.0KHz
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Ciss
Coss
Crss
  50 pF
  25 pF VDS = 10V, VGS = 0V, f = 1.0MHz
  8.0 pF
Turn-On Delay Time
Turn-Off Delay Time
tD(ON)
tD(OFF)
20
20
ns
ns VDD = 30V, ID = 0.2A, RGEN = 50
Notes:
6. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Incorporated’s suggested pad layout, which can be found on our
website at http://www.diodes.com/package-outlines.html.
7. Short duration pulse test used to minimize self-heating effect.
0.6
TTjJ==252°5C°C
0.5
0.4
0.3
0.2
0.1
VGS = 3.5V
VGS = 3.25V
VGS = 3.0V
VGS = 2.75V
VGS = 2.5V
0
0 1 2 3 4 5 6 7 8 9 10
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Drain-Source Current vs. Drain-Source Voltage
0.8
VDS = 1V
0.7
0.6
0.5
0.4
-55°C
25°C
150°C
0.3
0.2
0.1
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Transfer Characteristics
BSS138
Document number: DS30144 Rev. 21 - 2
2 of 5
www.diodes.com
August 2017
© Diodes Incorporated


Part Number BSS138
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes Incorporated
Total Page 5 Pages
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