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Diodes Semiconductor Electronic Components Datasheet

BSS138W Datasheet

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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BSS138W
N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
· Low On-Resistance
· Low Gate Threshold Voltage
· Low Input Capacitance
· Fast Switching Speed
A
D
BC
Mechanical Data
GS
· Case: SOT-323, Molded Plastic
· Case Material - UL Flammability Rating 94V-0
G
H
· Moisture sensitivity: Level 1 per J-STD-020A K
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections: See Diagram
J
DE
Drain
· Marking Code (See Page 2): K38
· Ordering & Date Code Information: See Page 2
· Weight: 0.006 grams (approx.)
Gate
L
M
Maximum Ratings @ TA = 25°C unless otherwise specified
Source
Characteristic
Drain-Source Voltage
Drain-Gate Voltage (Note 1)
Gate-Source Voltage
Drain Current (Note 2)
Total Power Dissipation (Note 2)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Continuous
Continuous
Symbol
VDSS
VDGR
VGSS
ID
Pd
RqJA
Tj, TSTG
Electrical Characteristics @ TA = 25°C unless otherwise specified
BSS138W
50
50
±20
200
200
625
-55 to +150
SOT-323
Dim Min Max
A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
a 0° 8°
All Dimensions in mm
Units
V
V
V
mA
mW
°C/W
°C
Characteristic
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Symbol Min Typ Max Unit
Test Condition
BVDSS
IDSS
IGSS
50
¾
¾
75 ¾
V VGS = 0V, ID = 250mA
¾ 0.5 µA VDS = 50V, VGS = 0V
¾ ±100 nA VGS = ±20V, VDS = 0V
VGS(th) 0.5 1.2 1.5
V VDS = VGS, ID = -250mA
RDS (ON) ¾
1.4 3.5
W VGS = 10V, ID = 0.22A
gFS 100 ¾
¾ mS VDS =25V, ID = 0.2A, f = 1.0KHz
Ciss ¾ ¾ 50 pF
Coss
¾
¾
25
pF
VDS = 10V, VGS = 0V
f = 1.0MHz
Crss ¾ ¾ 8.0 pF
tD(ON)
¾
¾
20
ns VDD = 30V, ID = 0.2A,
tD(OFF)
¾
¾
20
ns RGEN = 50W
Note: 1. RGS £ 20KW.
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. Short duration test pulse used to minimize self-heating effect.
DS30206 Rev. 3 - 2
1 of 5
www.diodes.com
BSS138W


Diodes Semiconductor Electronic Components Datasheet

BSS138W Datasheet

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

No Preview Available !

Ordering Information (Note 4)
Notes:
Device
BSS138W-7
Packaging
SOT-323
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Shipping
3000/Tape & Reel
K38
K38 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year
Code
Month
Code
1998
J
Jan
1
1999
K
2000
L
2001
M
Feb March Apr
234
0.6
Tj = 25°C
0.5
0.4
0.3
2002
N
May
5
2003
P
Jun
6
2004
R
Jul
7
2005
S
Aug
8
2006
T
Sep
9
VGS = 3.5V
VGS = 3.25V
VGS = 3.0V
VGS = 2.75V
2007
U
Oct
O
2008
V
Nov
N
2009
W
Dec
D
0.2
VGS = 2.5V
0.1
DS30206 Rev. 3 - 2
0
0 1 2 3 4 5 6 7 8 9 10
Fig. 1 DVraDinS,-SDoRuArcIeN-CSuOrrUeRntCvEs.VDOraLTinA-SGoEu(rVce) Voltage
0.8
0.7
VDS = 1V
-55° C
0.6 25°C
0.5 150°C
0.4
0.3
0.2
0.1
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Transfer Characteristics
2 of 5
www.diodes.com
BSS138W


Part Number BSS138W
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Maker Diodes Incorporated
Total Page 5 Pages
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