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DMN2300UFB - 20V N-Channel MOSFET

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Load Switch Mechanical Data Case: X1-DFN1006-3 Case Material: Molded Plastic,

Features

  • Footprint of Just 0.6mm2.
  • Thirteen Times Smaller Than SOT23.
  • 0.5mm Profile.
  • Ideal for Low Profile.

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Datasheet Details

Part number DMN2300UFB
Manufacturer Diodes Incorporated
File Size 434.56 KB
Description 20V N-Channel MOSFET
Datasheet download datasheet DMN2300UFB Datasheet

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Full PDF Text Transcription

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Product Summary BVDSS 20V RDS(ON) 175mΩ @ VGS = 4.5V 240mΩ @ VGS = 2.5V 360mΩ @ VGS = 1.8V ID Max TA = +25°C TA 1=.3+22A5°C 1.11A 0.91A DMN2300UFB 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits  Footprint of Just 0.6mm2 – Thirteen Times Smaller Than SOT23  0.5mm Profile – Ideal for Low Profile Applications  On Resistance <200mΩ @ VGS = 4.5V  Low Gate Threshold Voltage  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  ESD Protected Gate Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
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