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Diodes Semiconductor Electronic Components Datasheet

DMN5L06DMK Datasheet

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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DMN5L06DMK pdf
SPICE MODEL: DMN5L06DMK
Lead-free Green
DMN5L06DMK
DUAL N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
· Dual N-Channel MOSFET
· Low On-Resistance
· Very Low Gate Threshold Voltage
· Low Input Capacitance
· Fast Switching Speed
· Low Input/Output Leakage
· Ultra-Small Surface Mount Package
· Lead Free By Design/RoHS Compliant (Note 2)
· ESD Protected Up To 2kV
· "Green" Device (Note 4)
· Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
· Case: SOT-26
· Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
· Terminal Connections: See Diagram
· Terminals: Finish ¾ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
· Marking: See Page 2
· Ordering & Date Code Information: See Page 2
· Weight: 0.015 grams (approximate)
K
J
A
BC
H
DF
L
M
D2 G1 S1
S2 G2 D1
SOT-26
Dim Min Max Typ
A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D ¾ ¾ 0.95
F ¾ ¾ 0.55
H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
M 0.10 0.20 0.15
a 0° 8° ¾
All Dimensions in mm
ESD protected up to 2kV
Maximum Ratings @ TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Continuous
Pulsed (Note 3)
Symbol
VDSS
VGSS
ID
Pd
RqJA
Tj, TSTG
Value
50
±20
305
800
225
556
-65 to +150
Note:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width £10mS, Duty Cycle £1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Units
V
V
mA
mW
°C/W
°C
DS30927 Rev. 2 - 2
1 of 5
www.diodes.com
DMN5L06DMK
ã Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMN5L06DMK Datasheet

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

No Preview Available !

DMN5L06DMK pdf
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
@ TA = 25°C unless otherwise specified
Symbol Min Typ
@ TC = 25°C
BVDSS
IDSS
50
¾
¾
¾
Gate-Body Leakage
IGSS ¾ ¾
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS(th)
RDS (ON)
ID(ON)
|Yfs|
VSD
0.49
¾
¾
¾
0.5
200
0.5
¾
¾
¾
¾
1.4
¾
¾
Ciss ¾ ¾
Coss ¾ ¾
Crss ¾ ¾
Notes: 5. Short term duration test pulse used to minimize self-heating effect.
Max Unit
Test Condition
¾ V VGS = 0V, ID = 10mA
60 nA VDS = 50V, VGS = 0V
1 µA VGS = ±12V, VDS = 0V
500 nA VGS = ±10V, VDS = 0V
50 nA VGS = ±5V, VDS = 0V
1.2 V VDS = VGS, ID = 250mA
3.0 VGS = 1.8V, ID = 50mA
2.5 W VGS = 2.5V, ID = 50mA
2.0 VGS = 5.0V, ID = 50mA
¾ A VGS = 10V, VDS = 7.5V
¾ mS VDS =10V, ID = 0.2A
1.4 V VGS = 0V, IS = 115mA
50 pF
25
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
5.0 pF
1.5
VGS = 10V
8V
6V
5V
1.2 4V
3V
0.9
8V
10V
5V
4V
3V
6V
0.6
0.3
0
01 2 34 5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
1
VDS = 10V
Pulsed
TA = 150°C
0.1 TA = 125°C
TA = 85°C
TA = 25°C
0.01
0
TA = -25°C
TA = -55°C
12
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
3
DS30927 Rev. 2 - 2
2 of 5
www.diodes.com
DMN5L06DMK


Part Number DMN5L06DMK
Description DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Maker Diodes Incorporated
Total Page 5 Pages
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