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Diodes Semiconductor Electronic Components Datasheet

GBJ8005 Datasheet

8.0A GLASS PASSIVATED BRIDGE RECTIFIER

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GBJ8005 - GBJ810
8.0A GLASS PASSIVATED BRIDGE RECTIFIER
Features
· Glass Passivated Die Construction
· High Case Dielectric Strength of 1500VRMS
· Low Reverse Leakage Current
· Surge Overload Rating to 170A Peak
· Ideal for Printed Circuit Board Applications
· Plastic Material - UL Flammability
Classification 94V-0
· UL Listed Under Recognized Component
Index, File Number E94661
Mechanical Data
· Case: Molded Plastic
· Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
· Polarity: Molded on Body
· Mounting: Through Hole for #6 Screw
· Mounting Torque: 5.0 in-lbs Maximum
· Weight: 6.6 grams (approx.)
· Marking: Type Number
GBJ
Dim Min Max
A 29.70 30.30
B 19.70 20.30
KA
L C 17.00 18.00
M D 3.80 4.20
E 7.30 7.70
B G 9.80 10.20
_ S N H 2.00 2.40
J
H
I 0.90 1.10
D
P
J 2.30 2.70
C R K 3.0 X 45°
I L 4.40 4.80
M 3.40 3.80
G EE
N 3.10 3.40
P 2.50 2.90
R 0.60 0.80
S 10.80 11.20
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
RMS Reverse Voltage
VR(RMS)
Average Forward Rectified Output Current
@ TC = 110°C
Non-Repetitive Peak Forward Surge Current, 8.3ms single
half-sine-wave superimposed on rated load
(JEDEC method)
IO
IFSM
Forward Voltage per element
@ IF = 4.0A VFM
Peak Reverse Current
at Rated DC Blocking Voltage
I2t Rating for Fusing (t < 8.3ms) (Note 1)
@ TC = 25°C
@ TC = 125°C
IR
I2t
Typical Junction Capacitance per Element (Note 2)
Cj
Typical Thermal Resistance Junction to Case (Note 3)
RqJC
Operating and Storage Temperature Range
Tj, TSTG
GBJ
8005
50
35
GBJ
801
100
70
GBJ GBJ GBJ
802 804 806
200 400 600
140 280 420
8.0
170
1.0
5.0
500
120
55
1.6
-65 to +150
GBJ
808
800
560
GBJ
810
Unit
1000 V
700 V
A
A
V
mA
A2s
pF
°C/W
°C
Notes:
1. Non-repetitive, for t > 1.0ms and < 8.3ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 100 x 100 x 1.6mm aluminum plate heat sink.
DS21217 Rev. D-2
1 of 2
GBJ8005-GBJ810


Diodes Semiconductor Electronic Components Datasheet

GBJ8005 Datasheet

8.0A GLASS PASSIVATED BRIDGE RECTIFIER

No Preview Available !

10
8
With heatsink
6
4
Without heatsink
2
Resistive or
Inductive load
0
25
50
75
100 125 150
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
180
160
Single half-sine-wave
(JEDEC method)
Tj = 150°C
120
80
40
0
1
10 100
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Surge Current
1000
10
1.0
0.1
Tj = 25°C
Pulse width = 300µs
0.01
0
0.4 0.8 1.2 1.6 1.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics (per element)
100
Tj = 25°C
f = 1MHz
10
1
1
10
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
100
100
10
Tj = 125°C
Tj = 100°C
DS21217 Rev. D-2
1.0 Tj = 50°C
Tj = 25°C
0.1
0 20 40
60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
2 of 2
GBJ8005-GBJ810


Part Number GBJ8005
Description 8.0A GLASS PASSIVATED BRIDGE RECTIFIER
Maker Diodes Incorporated
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GBJ8005 Datasheet PDF






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