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Diodes Semiconductor Electronic Components Datasheet

HBDM60V600W Datasheet

COMPLEX TRANSISTOR ARRAY

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HBDM60V600W
COMPLEX TRANSISTOR ARRAY FOR BIPOLAR
TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER
Features
Epitaxial Planar Die Construction
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Sub-Component P/N
MMBT2907A_DIE
MMBTA06_DIE
Reference
Q1
Q2
Device Type
PNP Transistor
NPN Transistor
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Schematic & Pin Configuration
Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 6
Ordering Information: See Page 6
Weight: 0.016 grams (approximate)
CQ1
EQ1
EQ2
Q1
MMBT2907A
Q2
MMBTA06
Maximum Ratings: Total Device
Top View
BQ1
BQ2
CQ2
Device Schematic
@TA = 25°C unless otherwise specified
Characteristic
Operating and Storage Junction Temperature Range
Symbol
VEBO
Value
-55 to +150
Unit
°C
Thermal Characteristics: Total Device
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient Air (Note 3)
Symbol
PD
RθJA
Value
200
625
Unit
mW
°C/W
Maximum Ratings: Sub-Component Devices @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 3)
Symbol
VCBO
VCEO
VEBO
IC
Q1-PNP Transistor
(MMBT2907A)
-60
-60
-5.5
-600
Q2-NPN Transistor
(MMBTA06)
80
65
6
500
Unit
V
V
V
mA
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on page 7 or on Diodes Inc. suggested pad layout document
AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
HBDM60V600W
Document number: DS30701 Rev. 5 - 2
1 of 7
www.diodes.com
July 2008
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

HBDM60V600W Datasheet

COMPLEX TRANSISTOR ARRAY

No Preview Available !

HBDM60V600W
Electrical Characteristics: PNP (MMBT2907A) Transistor (Q1) @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Symbol Min Max Unit
Test Condition
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEX
IBL
-60
-60
-5.5
V IC = -10μA, IE = 0
V IC = -10mA, IB = 0
V IE = -10μA, IC = 0
-10 nA VCB = -50V, IE = 0
-50 nA VCE = -30V, VEB(OFF) = -0.5V
-50 nA VCE = -30V, VEB(OFF) = -0.5V
100 ⎯ ⎯ IC = -100μA, VCE = -10V
100 ⎯ ⎯ IC = -1.0mA, VCE = -10V
hFE 100 ⎯ ⎯ IC = -10mA, VCE = -10V
100 300 IC = -150mA, VCE = -10V
50 ⎯ ⎯ IC = -500mA, VCE = -10V
VCE(SAT)
-0.3
-0.5
V IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
VBE(SAT)
-0.95
-1.3
V IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
fT
100
MHz VCE = -2.0V, IC = -10mA,
f = 100MHz
ton
td
tr
45 ns
10 ns VCE = -30V, IC = -150mA,
40 ns IB1 = -15mA
toff
ts
tr
100 ns
80
30
ns
ns
VCC = -6.0V, IC = -150mA,
IB1 = IB2 = -15mA
Electrical Characteristics: NPN (MMBTA06) Transistor (Q2) @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Symbol Min Typ Max Unit
Test Condition
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICES
IEBO
80
65
6
⎯ ⎯ V IC = 100μA, IE = 0
⎯ ⎯ V IC = 1mA, IB = 0
⎯ ⎯ V IE = 100μA, IC = 0
100 nA VCB = 80V, IE = 0
100 nA VCE = 90V, VBE = 0
100 nA VEB = 5V, IC = 0
hFE
250 ⎯ ⎯ ⎯ VCE = 1V, IC = 10mA
100 ⎯ ⎯ ⎯ VCE = 1V, IC = 100mA
VCE(SAT)
0.2 0.4
V IC = 100mA, IB = 10mA
VBE(ON)
0.7 0.75 0.8 V VCE = 1V, IC = 100mA
VBE(SAT)
0.95 V IC = 100mA, IB = 5mA
fT
100
MHz
VCE = 20V, IC = 10mA,
f = 100MHz
Notes: 4. Short duration pulse test used to minimize self-heating effect.
HBDM60V600W
Document number: DS30701 Rev. 5 - 2
2 of 7
www.diodes.com
July 2008
© Diodes Incorporated


Part Number HBDM60V600W
Description COMPLEX TRANSISTOR ARRAY
Maker Diodes Incorporated
Total Page 7 Pages
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