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RB721Q-40 Datasheet

Schottky barrier diode

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Diodes
Schottky barrier diode
RB721Q-40
RB721Q-40
!Applications
High speed switching
!Features
1) Glass-sealed envelope for high reliability. (MSD)
2) Small pitch enables insertion on PCBs.
3) Low VF and low IR.
!Construction
Silicon epitaxial planar
!External dimensions (Units : mm)
CATHODE BAND (BLACK)
φ0.4±0.1
29±1
2.7±0.3
29±1
φ1.8±0.2
ROHM : MSD
EIAJ :
JEDEC : DO-34
S
Product identification number 2
is stamped on body of main unit.
!Absolute maximum ratings (Ta=25°C)
Parameter
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge current
Junction temperature
Storage temperature
60 Hz for 1
Symbol
VRM
VR
IO
IFSM
Tj
Tstg
Limits
40
40
30
200
125
40~+125
Unit
V
V
mA
mA
°C
°C
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
VF − − 0.37 V IF=1mA
Reverse current
IR − − 0.5 µA VR=25V
Capacitance between terminals
CT
2.0 pF VR=1V, f=1MHz
Note) ESD sensitive product handling required.


Diodes Semiconductor Electronic Components Datasheet

RB721Q-40 Datasheet

Schottky barrier diode

No Preview Available !

Diodes
!Electrical characteristic curves (Ta=25°C)
100m
Typ.
pulse measurement
100µ
Typ.
pulse measurement
10m 10µ Ta=100°C
Ta=75°C
1m 1µ
Ta=50°C
100µ 100n Ta=25°C
10µ 10n
1µ
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
FORWARD VOLTAGE : VF (V)
Fig.1 Forward characteristics
1n
0 5 10 15 20 25 30 35
REVERSE VOLTAGE : VR (V)
Fig.2 Reverse characteristics
RB721Q-40
100
10
1
0.1
0
5 10 15 20 25
REVERSE VOLTAGE : VR (V)
Fig.3 Capacitance between
terminals characteristics
10
IR=10mA
5 Irr=1mA
2
1
0.5
0.2
0.1
0 10 20 30
FORWARD CURRENT : IF (mA)
Fig.4 Reverse recovery time
characteristics
100
80
60
40
20
0
0 25 50 75 100 125
AMBIENT TEMPERATURE : Ta (°C)
Fig.5 Derating curve
(mounting on glass epoxy PCBs)


Part Number RB721Q-40
Description Schottky barrier diode
Maker Diodes Incorporated
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Diodes Incorporated





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