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TZX13 Datasheet

500mW EPITAXIAL PLANAR ZENER DIODE

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TZX2V4 - TZX36C
500mW EPITAXIAL PLANAR ZENER DIODE
Features
· Planar Die Construction
· 500mW Power Dissipation on FR-4 PCB
· General Purpose, Medium Current
ABA
Mechanical Data
· Case: DO-35, Glass
· Leads: Solderable per MIL-STD-202,
Method 208
· Marking: Type Number
· Polarity: Cathode Band
· Weight: 0.35 grams (approx.)
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Zener Current (See Table on page 2)
Forward Voltage
@ IF = 200mA
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
¾
VF
Pd
RqJA
Tj, TSTG
D
DO-35
Dim Min Max
A 25.40 ¾
B ¾ 4.00
C ¾ 0.60
D ¾ 2.00
All Dimensions in mm
Value
¾
1.5
500
300
-65 to +175
Notes: 1. Valid provided that leads are kept at ambient temperature.
2. Tested with pulses, t £ 1.0ms.
C
Unit
¾
V
mW
K/W
°C
DS30089 Rev. 1P-5
1 of 4
TZX2V4 - TZX36C


Diodes Semiconductor Electronic Components Datasheet

TZX13 Datasheet

500mW EPITAXIAL PLANAR ZENER DIODE

No Preview Available !

Electrical Characteristics @ TA = 25°C unless otherwise specified
Type
Number
TZX2V4
TZX2V4A
TZX2V4B
TZX2V7
TZX2V7A
TZX2V7B
TZX2V7C
TZX3V0
TZX3V0A
TZX3V0B
TZX3V0C
TZX3V3
TZX3V3A
TZX3V3B
TZX3V3C
TZX3V6
TZX3V6A
TZX3V6B
TZX3V6C
TZX3V9
TZX3V9A
TZX3V9B
TZX3V9C
TZX4V3
TZX4V3A
TZX4V3B
TZX4V3C
TZX4V3D
TZX4V7
TZX4V7A
TZX4V7B
TZX4V7C
TZX4V7D
TZX5V1
TZX5V1A
TZX5V1B
TZX5V1C
TZX5V1D
TZX5V6
TZX5V6A
TZX5V6B
TZX5V6C
TZX5V6D
TZX5V6E
Zener Voltage Range (Note 2)
VZ @ IZT
Min (V)
Max (V)
2.3 2.6
2.3 2.5
2.4 2.6
2.5 2.9
2.5 2.7
2.6 2.8
2.7 2.9
2.8 3.2
2.8 3.0
2.9 3.1
3.0 3.2
3.1 3.5
3.1 3.3
3.2 3.4
3.3 3.5
3.4 3.8
3.4 3.6
3.5 3.7
3.6 3.8
3.7 4.1
3.7 3.9
3.8 4.0
3.9 4.1
4.0 4.5
4.0 4.2
4.1 4.3
4.2 4.4
4.3 4.5
4.4 4.9
4.4 4.6
4.5 4.7
4.6 4.8
4.7 4.9
4.8 5.3
4.8 5.0
4.9 5.1
5.0 5.2
5.1 5.3
5.2 5.9
5.2 5.5
5.3 5.6
5.4 5.7
5.5 5.8
5.6 5.9
Test Current
IZT
mA
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
Maximum Zener
Impedance
ZZT @ IZT
W
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
40
40
40
40
40
40
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses, t £ 1.0ms.
DS30089 Rev. 1P-5
2 of 4
Maximum Reverse
Leakage Current
IR @ VR
mA V
5.0 0.5
5.0 0.5
5.0 0.5
5.0 0.5
5.0 0.5
5.0 0.5
5.0 0.5
5.0 0.5
5.0 0.5
5.0 0.5
5.0 0.5
5.0 1.0
5.0 1.0
5.0 1.0
5.0 1.0
5.0 1.0
5.0 1.0
5.0 1.0
5.0 1.0
5.0 1.0
5.0 1.0
5.0 1.0
5.0 1.0
5.0 1.5
5.0 1.5
5.0 1.5
5.0 1.5
5.0 1.5
5.0 2.0
5.0 2.0
5.0 2.0
5.0 2.0
5.0 2.0
5.0 2.0
5.0 2.0
5.0 2.0
5.0 2.0
5.0 2.0
5.0 2.0
5.0 2.0
5.0 2.0
5.0 2.0
5.0 2.0
5.0 2.0
TZX2V4 - TZX36C


Part Number TZX13
Description 500mW EPITAXIAL PLANAR ZENER DIODE
Maker Diodes Incorporated
Total Page 4 Pages
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