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Diotec

BAS16W Datasheet Preview

BAS16W Datasheet

Fast Switching Surface Mount Si-Planar Diodes

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BAS16W
BAS16W
Fast Switching Surface Mount Si-Planar Diodes
Schnelle Si-Planar-Dioden für die Oberflächenmontage
Version 2006-07-11
Power dissipation – Verlustleistung
2±0.1
0.3 3
Type
Code
1
1.3
2
1±0.1
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Plastic case – Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions - Maße [mm]
1 = A 2 = n.c. /frei 3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
200 mW
85 V
SOT-323
0.01 g
Maximum ratings (TA = 25°C)
Power dissipation Verlustleistung
Max. average forward current – Dauergrenzstrom (dc)
Non repetitive peak forward surge current
Stoßstrom-Grenzwert
tp 1 s
tp 1 µs
Repetitive peak reverse voltage – Periodische Spitzensperrspannung
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Grenzwerte (TA = 25°C)
BAS16W
Ptot 200 mW 1)
IFAV 150 mA 1)
IFSM 0.5 A
IFSM 2 A
VRRM
85 V
Tj -55...+150°C
TS -55…+150°C
Characteristics (Tj = 25°C)
Forward voltage 2)
Durchlass-Spannung 2)
Leakage current
Sperrstrom
Tj = 25°C
Tj = 150°C
Tj = 150°C
Max. junction capacitance – Max. Sperrschichtkapazität
VR = 0 V, f = 1 MHz
Reverse recovery time – Sperrverzug
IF = 10 mA über/through IR = 10 mA bis/to IR = 1 mA
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
VR = 75 V
VR = 25 V
VR = 75 V
Kennwerte (Tj = 25°C)
VF < 715 mV
VF < 855 mV
VF < 1.0 V
VF < 1.25 V
IR < 1 µA
IR < 30 µA
IR < 50 µA
CT 2 pF
trr < 4 ns
RthA < 620 K/W 1)
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 Tested with pulses tp = 300 µs, duty cycle 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1




Diotec

BAS16W Datasheet Preview

BAS16W Datasheet

Fast Switching Surface Mount Si-Planar Diodes

No Preview Available !

Pinning – Anschlussbelegung
3
12
Fast Switching Single Diode
Schnelle Einzeldiode
1 = A 2 = n.c./frei 3 = C
BAS16W
Marking – Stempelung
BAS16W = A2
120
[%]
100
80
60
40
20
Ptot
0
0 TA 50 100 150 [°C]
Power dissipation versus ambient temperature 1)
Verlustleistung in Abh. von d. Umgebungstemp.1)
1
[A]
10-1
10-2
Tj = 125°C
10-3
Tj = 25°C
IF
10-4
0
VF 0.4 0.6 0.8 1.0 [V]
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
1.4
2
http://www.diotec.com/
© Diotec Semiconductor AG


Part Number BAS16W
Description Fast Switching Surface Mount Si-Planar Diodes
Maker Diotec
Total Page 2 Pages
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