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Diotec

ES3D Datasheet Preview

ES3D Datasheet

Superfast Switching Surface Mount Silicon Rectifier Diodes

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ES3A ... ES3D
ES3A ... ES3D
Superfast Switching Surface Mount Silicon Rectifier Diodes
Superschnelle Silizium-Gleichrichterdioden für die Oberflächenmontage
Version 2011-10-17
Nominal current
7.9±0.2
Nennstrom
3A
1.2 0.15
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Plastic case
Kunststoffgehäuse
50...200 V
~ SMC
~ DO-214AB
Type
Typ
7.5±0.2
Dimensions - Maße [mm]
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
0.21 g
Maximum ratings
Type
Typ
ES3A
ES3B
ES3C
ES3D
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
50
100
150
200
Grenzwerte
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
50
100
150
200
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50 Hz half sine-wave
Stoßstrom für eine 50 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
TT = 100°C
IFAV
f > 15 Hz
IFRM
TA = 25°C
IFSM
TA = 25°C
i2t
Tj
TS
3A
15 A 1)
100 A
50 A2s
-50...+150°C
-50...+150°C
1 Max. temperature of the terminals TT = 100°C – Max. Temperatur der Anschlüsse TT = 100°C
© Diotec Semiconductor AG
http://www.diotec.com/
1




Diotec

ES3D Datasheet Preview

ES3D Datasheet

Superfast Switching Surface Mount Silicon Rectifier Diodes

No Preview Available !

Characteristics
Type
Typ
ES3A...ES3D
Reverse recovery time
Sperrverzugszeit
trr [ns] 1)
< 20
ES3A ... ES3D
Kennwerte
Forward voltage
Durchlass-Spannung
VF [V] at / bei IF [A]
< 0.9
3
Leakage current
Sperrstrom
Tj = 25°C VR = VRRM
Tj = 100°C VR = VRRM
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Thermal resistance junction to terminal
Wärmewiderstand Sperrschicht – Anschluss
IR
IR
RthA
RthL
< 10 µA
< 500 µA
< 40 K/W 2)
< 10 K/W
120
[%]
100
80
60
40
20
IFAV
0
0 TT 50 100 150 [°C]
Rated forward current vs. temp. of the terminals
Zul. Richtstrom in Abh. v. d. Temp. der Terminals
10
[A]
ES3A...D
1
0.1
10-2
IF
10-3
Tj = 25°C
VF [V]
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
1 IF = 0.5 A through/über IR = 1 A to/auf IR = 0.25 A
2 Mounted on P.C. board with 50 mm2 copper pads at each terminal
Montage auf Leiterplatte mit 50 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 http://www.diotec.com/
© Diotec Semiconductor AG


Part Number ES3D
Description Superfast Switching Surface Mount Silicon Rectifier Diodes
Maker Diotec
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