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Diotec Semiconductor
Diotec Semiconductor

BSR15 Datasheet Preview

BSR15 Datasheet

Surface mount Si-Epitaxial PlanarTransistors

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BSR15 pdf
BSR 15, BSR 16
Switching Transistors
PNP
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
PNP
2.9 ±0.1
0.4
3
Type
Code
1
1.9
2
1.1
Dimensions / Maße in mm
1=B 2=E 3=C
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
250 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (TA = 25/C)
Collector-Emitter-voltage
B open
Collector-Base-voltage
E open
Emitter-Base-voltage
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Junction temp. – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
- VCE0
- VCB0
- VEB0
Ptot
- IC
- ICM
- IBM
Tj
TS
Grenzwerte (TA = 25/C)
BSR 15
BSR 16
40 V
60 V
60 V
5V
250 mW 1)
600 mA
800 mA
200 mA
150/C
- 65…+ 150/C
Characteristics (Tj = 25/C)
Collector-Base cutoff current – Kollektorreststrom
IE = 0, - VCB = 50 V
IE = 0, - VCB = 50 V, Tj = 150/C
BSR 15
IE = 0, - VCB = 60 V
IE = 0, - VCB = 60 V, Tj = 150/C
BSR 16
Emitter-Base cutoff current – Emitterreststrom
- ICB0
- ICB0
- ICB0
- ICB0
IC = 0, - VEB = 5 V
- IEB0
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
– – 20 nA
– – 20 :A
– – 10 nA
– – 10 :A
– – 50 nA
1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
8
01.11.2003



Diotec Semiconductor
Diotec Semiconductor

BSR15 Datasheet Preview

BSR15 Datasheet

Surface mount Si-Epitaxial PlanarTransistors

No Preview Available !

BSR15 pdf
Switching Transistors
BSR 15, BSR 16
Characteristics (Tj = 25/C)
DC current gain – Kollektor-Basis-Stromverhältnis 1)
- VCE = 10 V, - IC = 0.1 mA
BSR 15
BSR 16
hFE
hFE
- VCE = 10 V, - IC = 1 mA
BSR 15
BSR 16
hFE
hFE
- VCE = 10 V, - IC = 10 mA
BSR 15
BSR 16
hFE
hFE
- VCE = 10 V, - IC = 500 mA
BSR 15
BSR 16
hFE
hFE
- VCE = 10 V, - IC = 150 mA
hFE
Collector saturation volt. – Kollektor-Sättigungsspg. 1)
- IC = 150 mA, - IB = 15 mA
- VCEsat
- IC = 500 mA, - IB = 50 mA
- VCEsat
Base saturation voltage – Basis-Sättigungsspannung 1)
- IC = 150 mA, - IB = 15 mA
- IC = 500 mA, - IB = 50 mA
Gain-Bandwidth Product – Transitfrequenz
- VBEsat
- VBEsat
- VCE = 20 V, - IC = 20 mA, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 2 V, IC = ic = 0, f = 1 MHz
Switching times – Schaltzeiten
CEB0
turn-on time
ton
delay time
rise time
turn-off time
storage time
ICon = 150 mA
IBon = 15 mA
- IBoff = 15 mA
td
tr
toff
ts
fall time
tf
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
35 –
75 –
50 –
100 –
75 –
100 –
30 –
50 –
100 – 300
– – 400 mV
– – 1.6 V
– – 1.3 V
– – 2.6 V
200 MHz
– 8 pF –
– 30 pF –
– – 40 ns
– – 12 ns
– – 30 ns
– – 365 ns
– – 300 ns
– – 65 ns
RthA 420 K/W 2)
BSR 13, BSR 14
Marking - Stempelung
BSR 15 = T7
BSR 16 = T8
1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
9


Part Number BSR15
Description Surface mount Si-Epitaxial PlanarTransistors
Maker Diotec Semiconductor
Total Page 2 Pages
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BSR15 pdf
BSR15 Datasheet PDF
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