501N04A Description
An DE150-501N04A RF Power MOSFET Preliminary Data Sheet IXYS pany N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol VDSS.
501N04A Key Features
- Isolated Substrate
- high isolation voltage (>2500V)
- excellent thermal transfer
- Increased temperature and power
- cycling capability IXYS advanced low Qg process easier to drive faster switching Low RDS(on) Very low insertion inductan
- Optimized for RF and high speed
- Easy to mount-no insulators needed
- High power density