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501N04A - RF Power MOSFET

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Features

  • SG1 SG2 GATE = = = = 500 V 4.5 A 1.5 Ω 80W Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 PDHS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDHS PDAMB TJ TJM Tstg TL Weight Symbol DRAIN Tc = 25°C Derate 4.4W/°C above 25°C Tc = 25°C SD1 SD2 1.6mm (0.063 in) from case for 10 s 300 2.
  • Isolated Substrate.

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Datasheet Details

Part number 501N04A
Manufacturer Directed Energy
File Size 110.34 KB
Description RF Power MOSFET
Datasheet download datasheet 501N04A Datasheet
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    Directed Energy, Inc. An DE150-501N04A RF Power MOSFET Preliminary Data Sheet IXYS Company N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol VDSS www.DataSheet4U.com VDSS ID25 RDS(on) Maximum Ratings 500 500 ±20 ±30 4.5 27 4.5 3.5 >200 80 3.5 -55…+150 150 -55…+150 V V V V A A A mJ V/ns V/ns W W °C °C °C °C g Features SG1 SG2 GATE = = = = 500 V 4.5 A 1.5 Ω 80W Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 PDHS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDHS PDAMB TJ TJM Tstg TL Weight Symbol DRAIN Tc = 25°C Derate 4.4W/°C above 25°C Tc = 25°C SD1 SD2 1.6mm (0.
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