501N04A - RF Power MOSFET
501N04A Features
* SG1 SG2 GATE = = = = 500 V 4.5 A 1.5 Ω 80W Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 PDHS VDGR VGS VGSM ID25 IDM