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DCF10C60 Datasheet Preview

DCF10C60 Datasheet

Standard Gate SCR

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DCF10C60
Standard Gate
Silicon Controlled -
Rectifiers
Symbol
2. Anode
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 10 A )
Low On-State Voltage (1.4V(Typ.)@ ITM)
Isolation Voltage ( VISO = 2500V AC )
1.Cathode
3.Gate
General Description
Standard gate triggering thyristor is fully isolated package suitable
for the application where requiring high bidirectional blocking volt-
age capability and also suitable for over voltage protection ,motor
control circuit in power tool, inrush current limit circuit and heating
control system.
BVDRM = 600V
IT(RMS) = 6 A
ITSM = 66 A
TO-220F
1
2
3
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(AV)
IT(RMS)
ITSM
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
sine wave,50 to 60Hz,gate open
half sine wave : TC = 86 °C
180° Conduction Angle
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
I2t I2t for Fusing
t = 8.3ms
di/dt Critical rate of rise of on-state current
PGM
Forward Peak Gate Power Dissipation
TC = 106 °C, pulse width 1.0
PG(AV)
Forward Average Gate Power Dissipation TC = 106 °C,pulse width 1.0
IFGM
Forward Peak Gate Current
TC = 106 °C, pulse width 1.0
VRGM
VISO
TJ
TSTG
Reverse Peak Gate Voltage
Isolation Breakdown Voltage(R.M.S.)
Operating Junction Temperature
Storage Temperature
TC =106 °C, pulse width 1.0
A.C. 1 minute
July, 2005. Rev.0
copyright @ D&I Semiconductor Co., Ltd., All rights reserved.
Ratings
600
6.4
10
110
60
50
5
0.5
2
5.0
2500
- 40 ~ 125
- 40 ~ 150
Units
V
A
A
A
A2s
A/
W
W
A
V
V
°C
°C
1/5




DnI

DCF10C60 Datasheet Preview

DCF10C60 Datasheet

Standard Gate SCR

No Preview Available !

www.DataSheet4U.com
DCF10C60
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Items
Conditions
Ratings
Min. Typ. Max.
Unit
IDRM
Repetitive Peak Off-State
Current
VAK = VDRM
TC = 25 °C
TC = 125 °C
10
200
VTM Peak On-State Voltage (1)
ITM = 20 A
tp=380
1.6 V
IGT Gate Trigger Current (2)
VAK = 6 V(DC), RL=10
TC = 25 °C
15 mA
VGT Gate Trigger Voltage (2)
VD = 6 V(DC), RL=10
TC = 25 °C
1.5 V
VGD
dv/dt
IH
Non-Trigger Gate Voltage (1) VAK = 12 V, RL=100
TC = 125 °C
Critical Rate of Rise Off-State Linear slope up to VD=VDRM 67%,
Voltage
Gate open
TJ = 125°C
Holding Current
IT = 100mA, Gate Open
TC = 25 °C
0.2
200
V
V/
20 mA
Rth(j-c)
Rth(j-a)
Thermal Impedance
Thermal Impedance
Junction to case
Junction to Ambient
Notes :
1. Pulse Width 1.0 ms , Duty cycle 1%
2. RGK Current not Included in measurement.
3.8 °C/W
60 °C/W
2/5


Part Number DCF10C60
Description Standard Gate SCR
Maker DnI
Total Page 5 Pages
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