DFK1N60 datasheet, mosfet equivalent, DnI

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DFK1N60 Features and benefits

High ruggedness RDS(on) (Max 11.5 )@VGS=10V 1. Gate { { { N-Channel MOSFET 2. Drain BVDSS = 600V RDS(ON) = 11.5 ohm ID = 0.8A 3. Source Gate Charge (Typical 7nC) Impro.

DFK1N60 Description

This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche cha.

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