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MCR100-6A Datasheet Preview

MCR100-6A Datasheet

Standard Gate SCR

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MCR100-6A
Sensitive Gate
Silicon Controlled -
Rectifiers
Symbol
3. Anode
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 0.8 A )
Low On-State Voltage (1.2V(Typ.)@ ITM)
Pb - Free Packages are available
1.Cathode
2.Gate
BVDRM = 600V
IT(RMS) = 0.8 A
ITSM = 10 A
TO-92
General Description
Sensitive-gate triggering thyristor is suitable for the applica-
tion where gate current limited such as small motor control,
gate driver for large thyristor, sensing and detecting circuits.
1
2
3
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(AV)
IT(RMS)
ITSM
I2t
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I2t for Fusing
sine wave,50 to 60Hz,gate open
half sine wave : TC = 74 °C
all conduction angle
1/2 Cycle, 60Hz, sine wave
non-repetitive , t = 8.3ms
t = 8.3ms
PGM
PG(AV)
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
TA = 25 °C, pulse width 1.0
TA = 25 °C, t = 8.3ms
IFGM
Forward Peak Gate Current
TA = 25 °C, pulse width 1.0
VRGM
TJ
TSTG
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
TA = 25 °C, pulse width 1.0
Ratings
600
0.5
0.8
10
0.415
2
0.1
1
5.0
- 40 ~ 125
- 40 ~ 125
Units
V
A
A
A
A2s
W
W
A
V
°C
°C
April, 2005. Rev.0
copyright @ D&I Semiconductor Co., Ltd., All rights reserved.
1/5




DnI

MCR100-6A Datasheet Preview

MCR100-6A Datasheet

Standard Gate SCR

No Preview Available !

www.DataSheet4U.com
MCR100-6A
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Items
Conditions
Ratings
Min. Typ. Max.
Unit
IDRM
VTM
IGT
VGT
VGD
dv/dt
di/dt
Repetitive Peak Off-State
Current
VAK = VDRM or VRRM ; RGK = 1000
TC = 25 °C
TC = 125 °C
Peak On-State Voltage (1)
( ITM = 1 A, Peak )
Gate Trigger Current (2)
VAK = 6 V, RL=100
TC = 25 °C
TC = - 40 °C
Gate Trigger Voltage (2)
VD = 7 V, RL=100
TC = 25 °C
TC = - 40 °C
Non-Trigger Gate Voltage (1) VAK = 12 V, RL=100
TC = 125 °C
Critical Rate of Rise Off-State
Voltage
VD = Rated VDRM ,
form , RGK = 1000
TJ = 125 °C
Exponential wave-
Critical Rate of Rise Off-State
Voltage
IPK = 20A ; PW = 10
; diG/dt = 1A/
Igt = 20mA
0.2
20
10
200
1.2 1.7
V
200
500
0.8 V
1.2
V
35 V/
50 A/
IH Holding Current
Rth(j-c)
Rth(j-a)
Thermal Impedance
Thermal Impedance
VAK = 12 V, Gate Open
Initiating Curent = 20mA
TC = 25 °C
TC = - 40 °C
Junction to case
Junction to Ambient
2 5.0 mA
10
60 °C/W
150 °C/W
Notes :
1. Pulse Width 1.0 ms , Duty cycle 1%
2. Does not include RGK in measurement.
2/5


Part Number MCR100-6A
Description Standard Gate SCR
Maker DnI
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MCR100-6A Datasheet PDF






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