DG858BW45
DG858BW45 is Gate Turn-off Thyristor manufactured by Dynex.
Gate Turn-off Thyristor
Replaces July 1999 version, DS4096-3.0 DS4096-4.0 January 2000
Features q q q q q q
Double Side Cooling High Reliability In Service High Voltage Capability Fault Protection Without Fuses High Surge Current Capability Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements
KEY PARAMETERS 3000A ITCM VDRM 4500V 1180A IT(AV) d VD/dt 1000V/µs 300A/µs di T/dt
APPLICATIONS q q q q q q q
Variable speed A.C. motor drive inverters (VSD-AC) Uninterruptable Power Supplies High Voltage Converters Choppers Welding Induction Heating DC/DC Converters
Package outline type code: W. See Package Details for further information.
Figure 1. Package outline
VOLTAGE RATINGS
Type Number Repetitive Peak Off-state Voltage VDRM V 4500 Repetitive Peak Reverse Voltage VRRM V 16 Conditions
Tvj = 125o C, IDM = 100m A, IRRM = 50m A
CURRENT RATINGS
Symbol ITCM IT(AV) IT(RMS) Parameter Conditions Max. 3000 1180 1850 Units A A A
1/19
Repetitive peak controllable on-state current VD = 66% VDRM, Tj = 125o C, di GQ/dt = 40A/µs, Cs = 3µF Mean on-state current RMS on-state current THS = 80o C. Double side cooled, half sine 50Hz THS = 80o C. Double side cooled, half sine 50Hz
SURGE RATINGS
Symbol ITSM I2 t di T/dt Parameter Surge (non-repetitive) on-state current I2t for fusing Critical rate of rise of on-state current Conditions 10ms half sine. Tj = 125o C 10ms half sine. Tj =125o C VD = 3000V, IT = 3000A, Tj = 125o C, IFG > 40A, Rise time > 1.0µs To 66% VDRM; RGK ≤ 1.5Ω, Tj = 125o C To 66% VDRM; VRG = -2V, Tj = 125o C Peak stray inductance in snubber circuit IT = 3000A, VD = VDRM,-T
- j = 125˚C, d I/GQ = 40A/ µs, Cs = 3.0µF Max.
Units k A A2s A/µs
V/µs
2.0 x 106 300 130 1000 200 d VD/dt LS
Rate of rise of off-state voltage
V/µs n H
GATE RATINGS
Symbol VRGM IFGM
PFG(AV)
Parameter Peak reverse gate voltage Peak forward gate current Average...