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DIM1200ASM45-TL001 Datasheet Preview

DIM1200ASM45-TL001 Datasheet

Single Switch IGBT Module

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Data
Replaces DS6169-1
Preliminary Information
DIM1200ASM45-TL001
Single Switch IGBT Module
DS6169-2 August 2015 (LN32854)
FEATURES
10.2kV Isolation
10µs Short Circuit Withstand
High Thermal Cycling Capability
High Current Density Enhanced DMOS SPT
Isolated AlSiC Base With AlN Substrates
KEY PARAMETERS
VCES
VCE(sat) * (typ)
IC (max)
IC(PK) (max)
4500V
2.3V
1200A
2400A
* Measured at the auxiliary terminals
APPLICATIONS
High Reliability Inverters
Motor Controllers
Traction Drives
Choppers
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 1200V to
6500V and currents up to 2400A.
The DIM1200ASM45-TL001 is a single switch 4500V,
n-channel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide
reverse bias safe operating area (RBSOA) plus 10μs
short circuit withstand. This device is optimised for
traction drives and other applications requiring high
thermal cycling capability.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety.
3(C)
2(G)
9(C) 7(C)
5(C)
1(E)
8(E) 6(E) 4(E)
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM1200ASM45-TL001
Note: When ordering, please use the complete part
number
Outline type code: A
(See Fig. 11 for further information)
Fig. 2 Package
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
1/8




Dynex

DIM1200ASM45-TL001 Datasheet Preview

DIM1200ASM45-TL001 Datasheet

Single Switch IGBT Module

No Preview Available !

DIM1200ASM45-TL001
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
Tcase = 25°C unless stated otherwise
Symbol
Parameter
VCES
VGES
IC
IC(PK)
Pmax
I2t
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I2t value
Visol Isolation voltage per module
QPD Partial discharge per module
VGE = 0V
Test Conditions
Tcase = 95°C
1ms, Tcase = 115°C
Tcase = 25°C, Tj = 125°C
VR = 0, tp = 10ms, Tj = 125°C
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
IEC1287, V1 = 6900V, V2 = 5100V, 50Hz RMS
Max. Units
4500 V
±20 V
1200 A
2400 A
12.5
460
kW
kA2s
10.2 KV
10 pC
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
AlN
Baseplate material:
AlSiC
Creepage distance:
56mm
Clearance:
26mm
CTI (Comparative Tracking Index):
>600
Symbol
Parameter
Rth(j-c) Thermal resistance transistor
Rth(j-c)
Rth(c-h)
Thermal resistance diode
Thermal resistance
case to heatsink (per module)
Tj Junction temperature
Tstg Storage temperature range
Screw torque
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting M6
Electrical connections M4
Electrical connections M8
Min Typ. Max Units
- - 8 °C/kW
- - 16 °C/kW
- - 6 °C/kW
- - 125 °C
- - 125 °C
-40 - 125 °C
- - 5 Nm
- - 2 Nm
- - 10 Nm
2/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com


Part Number DIM1200ASM45-TL001
Description Single Switch IGBT Module
Maker Dynex
Total Page 8 Pages
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