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DIM1600ECM17-A000 Datasheet Preview

DIM1600ECM17-A000 Datasheet

IGBT Chopper Module

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Preliminary Information
DIM1600ECM17-A000
IGBT Chopper Module
DS6069-1 September 2011 (LN28672)
FEATURES
10µs Short Circuit Withstand
High Thermal Cycling Capability
Soft Punch Through Silicon
Isolated AlSiC Base with AlN Substrates
Lead Free Construction
APPLICATIONS
Motor Controllers
Power Supplies
Choppers
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 1200V to
6500V and currents up to 2400A.
The DIM1600ECM17-A000 is a 1700V, soft punch
through n-channel enhancement mode, insulated gate
bipolar transistor (IGBT) chopper module. The IGBT
has a wide reverse bias safe operating area (RBSOA)
plus 10μs short circuit withstand. This device is
optimised for traction drives and other applications
requiring high thermal cycling capability.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety.
KEY PARAMETERS
VCES
VCE(sat) * (typ)
IC (max)
IC(PK) (max)
1700V
2.7V
1600A
3200A
* Measured at the auxiliary terminals
3(C)
2(G)
9(C) 7(C) 5(A)
1(E)
8(E) 6(E) 4(K)
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM1600ECM17-A000
Note: When ordering, please use the complete part
number
Outline type code: E
(See Fig. 11 for further information)
Fig. 2 Package
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
1/8




Dynex

DIM1600ECM17-A000 Datasheet Preview

DIM1600ECM17-A000 Datasheet

IGBT Chopper Module

No Preview Available !

DIM1600ECM17-A000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
Tcase = 25°C unless stated otherwise
Symbol
Parameter
VCES
VGES
IC
IC(PK)
Pmax
I2t
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I2t value (IGBT arm)
Diode I2t value (Diode arm)
Visol Isolation voltage per module
QPD Partial discharge per module
VGE = 0V
Test Conditions
Tcase = 75°C
1ms, Tcase = 110°C
Tcase = 25°C, Tj = 150°C
VR = 0, tp = 10ms, Tj = 125ºC
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
IEC1287, V1 = 1800V, V2 = 1300V, 50Hz RMS
Max. Units
1700
±20
1600
3200
13900
480
480
V
V
A
A
W
kA2s
kA2s
4000 V
10 pC
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
AlN
Baseplate material:
AlSiC
Creepage distance:
33mm
Clearance:
20mm
CTI (Comparative Tracking Index):
>600
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-h)
Tj
Parameter
Thermal resistance transistor (per arm)
Thermal resistance diode (IGBT arm)
Thermal resistance diode (Diode arm)
Thermal resistance case to heatsink
(per module)
Junction temperature
Test Conditions
Continuous dissipation
junction to case
Continuous dissipation
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
Tstg Storage temperature range
-
Mounting M6
Screw torque
Electrical connections M4
Electrical connections M8
Min Typ. Max Units
- - 9 °C/kW
- - 20 °C/kW
- - 20 °C/kW
- - 6 °C/kW
- - 150 °C
- - 125 °C
-40 - 125 °C
- - 5 Nm
- - 2 Nm
- - 10 Nm
2/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com


Part Number DIM1600ECM17-A000
Description IGBT Chopper Module
Maker Dynex
Total Page 8 Pages
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